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1. H trapping at the metastable cation vacancy in α -Ga ₂ O ₃ and α -Al ₂ O ₃

   https://doi.org/10.1063/5.0094707  

   Venzie, Andrew; Portoff, Amanda; Stavola, Michael; Fowler, W. Beall; Kim, Jihyun; Jeon, Dae-Woo; Park, Ji-Hyeon; Pearton, Stephen J. (May 2022, Applied Physics Letters)

   α-Ga₂O₃has the corundum structure analogous to that of α-Al₂O₃. The bandgap energy of α-Ga₂O₃is 5.3 eV and is greater than that of β-Ga₂O₃, making the α-phase attractive for devices that benefit from its wider bandgap. The O–H and O–D centers produced by the implantation of H⁺and D⁺into α-Ga₂O₃have been studied by infrared spectroscopy and complementary theory. An O–H line at 3269 cm⁻¹is assigned to H complexed with a Ga vacancy (V_Ga), similar to the case of H trapped by an Al vacancy (V_Al) in α-Al₂O₃. The isolated V_Gaand V_Aldefects in α-Ga₂O₃and α-Al₂O₃are found by theory to have a “shifted” vacancy-interstitial-vacancy equilibrium configuration, similar to V_Gain β-Ga₂O₃, which also has shifted structures. However, the addition of H causes the complex with H trapped at an unshifted vacancy to have the lowest energy in both α-Ga₂O₃and α-Al₂O₃. 

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2. ReaxFF Study of Surface Chemical Reactions between α -Al ₂ O ₃ Substrates and H ₂ O/H ₂ Gas-Phase Molecules

   https://doi.org/10.1021/acs.jpcc.4c04669  

   Zhang, Yuwei; Nayir, Nadire; Shin, Yun Kyung; Mao, Qian; Jeong, Ga-Un; Chen, Chen; Redwing, Joan M; van_Duin, Adri_C T (November 2024, The Journal of Physical Chemistry C)
3. Thermal Conductivity of β-Phase Ga ₂ O ₃ and (Al _x Ga _{1– x} ) ₂ O ₃ Heteroepitaxial Thin Films

   https://doi.org/10.1021/acsami.1c08506  

   Song, Yiwen; Ranga, Praneeth; Zhang, Yingying; Feng, Zixuan; Huang, Hsien-Lien; Santia, Marco D.; Badescu, Stefan C.; Gonzalez-Valle, C. Ulises; Perez, Carlos; Ferri, Kevin; et al (August 2021, ACS Applied Materials & Interfaces)
4. Band offsets of (100) β -(Al _x Ga _1−x ) ₂ O ₃ / β -Ga ₂ O ₃ heterointerfaces grown via MOCVD

   https://doi.org/10.1063/5.0031584  

   Bhuiyan, A F; Feng, Zixuan; Johnson, Jared M.; Huang, Hsien-Lien; Hwang, Jinwoo; Zhao, Hongping (December 2020, Applied Physics Letters)

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5. Longitudinal phonon plasmon mode coupling in β -Ga ₂ O ₃

   https://doi.org/10.1063/1.5089145  

   Schubert, Mathias; Mock, Alyssa; Korlacki, Rafał; Knight, Sean; Galazka, Zbigniew; Wagner, Günther; Wheeler, Virginia; Tadjer, Marko; Goto, Ken; Darakchieva, Vanya (March 2019, Applied Physics Letters)