skip to main content


Title: Anisotropic dielectric functions, band-to-band transitions, and critical points in α -Ga 2 O 3
Award ID(s):
1808715
NSF-PAR ID:
10222750
Author(s) / Creator(s):
; ; ; ; ; ; ; ;
Date Published:
Journal Name:
Applied Physics Letters
Volume:
118
Issue:
6
ISSN:
0003-6951
Page Range / eLocation ID:
062103
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
More Like this
  1. null (Ed.)
  2. SiC and Ga 2 O 3 are promising wide band gap semiconductors for applications in power electronics because of their high breakdown electric field and normally off operation. However, lack of a suitable dielectric material that can provide high interfacial quality remains a problem. This can potentially lead to high leakage current and conducting loss. In this work, we present a novel atomic layer deposition process to grow epitaxially Mg x Ca 1− x O dielectric layers on 4H-SiC(0001) and β-Ga 2 O 3 $\left( {\bar 201} \right)$ substrates. By tuning the composition of Mg x Ca 1− x O toward the substrate lattice constant, better interfacial epitaxy can be achieved. The interfacial and epitaxy qualities were investigated and confirmed by cross-sectional transmission electron microscopy and X-ray diffraction studies. Mg 0.72 Ca 0.28 O film showed the highest epitaxy quality on 4H-SiC(0001) because of its closest lattice match with the substrate. Meanwhile, highly textured Mg 0.25 Ca 0.75 O films can be grown on β-Ga 2 O 3 $\left( {\bar 201} \right)$ with a preferred orientation of (111). 
    more » « less
  3. null (Ed.)