Modulation doping is one of the strategies to improve thermoelectric power factors of nanocomposites and thin‐film bilayered heterostructures by effectively increasing electrical conductivity. Here, it is reported that thin‐film heterostructures of heavily doped p‐type organic conducting polymer, poly(3,4‐ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) and undoped thin‐film Ge can enhance thermoelectric power factor by modulation doping. The maximum power factor and Seebeck coefficient of the bilayered heterostructures are 154 µW m−1K−2and 398 µV K−1, respectively, corresponding to 47‐fold and 41‐fold increases compared to those of bulk PEDOT:PSS and 64‐fold increase compared to power factor of undoped Ge. The enhancements in power factor and Seebeck coefficient are quantitatively described by the hole transfer from PEDOT:PSS to Ge, which takes into account the band alignment at the interface detected by Kraut's method. Agreement between the simulation and experiment results also implies predictability of thermoelectric performances of nanoscale bilayered heterostructures in general, when band offset, Fermi level, and individual electronic properties are available. This work can be further extended to predict performance of other nanoscale combinations of thermoelectric and other electronic materials in general.
Conducting polymers, such as the
- Award ID(s):
- 2003518
- NSF-PAR ID:
- 10222797
- Publisher / Repository:
- Nature Publishing Group
- Date Published:
- Journal Name:
- Nature Communications
- Volume:
- 12
- Issue:
- 1
- ISSN:
- 2041-1723
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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Abstract Poly(3,4‐ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) is a popular hole transport material in perovskite solar cells (PSCs). However, the devices with PEDOT:PSS exhibit large open‐circuit voltage (
V oc) loss and low efficiency, which is attributed to mismatched energy level alignment and the poor interface of PEDOT:PSS and perovskite. Here, three polymer analogues to polyaniline (PANI), PANI–carbazole (P1), PANI–phenoxazine (P2), and PANI–phenothiazine (P3) are designed with different energy levels to modify the interface between PEDOT:PSS and the perovskite layer and improve the device performance. The effects of the polymers on the device performance are demonstrated by evaluating the work function adjustment, perovskite growth control, and interface modification in MAPbI3‐based PSCs. Low bandgap Sn–Pb‐based PSCs are also fabricated to confirm the effects of the polymers. Three effects are evaluated through the comparison study of PEDOT:PSS‐based organic solar cells and MAPbI3 PSCs based on the PEDOT:PSS modified by P1, P2, and P3. The order of contribution for the three effects is work function adjustment > surface modification > perovskite growth control. MAPbI3 PSCs modified with P2 exhibit a highV ocof 1.13 V and a high‐power conversion efficiency of 21.06%. This work provides the fundamental understanding of the interface passivation effects for PEDOT:PSS‐based optoelectronic devices. -
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Abstract Organic electrochemical transistors (OECTs) hold promise for developing a variety of high‐performance (bio‐)electronic devices/circuits. While OECTs based on p‐type semiconductors have achieved tremendous progress in recent years, n‐type OECTs still suffer from low performance, hampering the development of power‐efficient electronics. Here, it is demonstrated that fine‐tuning the molecular weight of the rigid, ladder‐type n‐type polymer poly(benzimidazobenzophenanthroline) (BBL) by only one order of magnitude (from 4.9 to 51 kDa) enables the development of n‐type OECTs with record‐high geometry‐normalized transconductance (
g m,norm ≈ 11 S cm−1) and electron mobility × volumetric capacitance (µC * ≈ 26 F cm−1 V−1s−1), fast temporal response (0.38 ms), and low threshold voltage (0.15 V). This enhancement in OECT performance is ascribed to a more efficient intermolecular charge transport in high‐molecular‐weight BBL than in the low‐molecular‐weight counterpart. OECT‐based complementary inverters are also demonstrated with record‐high voltage gains of up to 100 V V−1and ultralow power consumption down to 0.32 nW, depending on the supply voltage. These devices are among the best sub‐1 V complementary inverters reported to date. These findings demonstrate the importance of molecular weight in optimizing the OECT performance of rigid organic mixed ionic–electronic conductors and open for a new generation of power‐efficient organic (bio‐)electronic devices. -
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Abstract Achieving high electrical conductivity and thermoelectric power factor simultaneously for n‐type organic thermoelectrics is still challenging. By constructing two new acceptor‐acceptor n‐type conjugated polymers with different backbones and introducing the 3,4,5‐trimethoxyphenyl group to form the new n‐type dopant 1,3‐dimethyl‐2‐(3,4,5‐trimethoxyphenyl)‐2,3‐dihydro‐1
H ‐benzo[d]imidazole (TP‐DMBI), high electrical conductivity of 11 S cm−1and power factor of 32 μW m−1 K−2are achieved. Calculations using Density Functional Theory show that TP‐DMBI presents a higher singly occupied molecular orbital (SOMO) energy level of −1.94 eV than that of the common dopant 4‐(1, 3‐dimethyl‐2, 3‐dihydro‐1H ‐benzoimidazol‐2‐yl) phenyl) dimethylamine (N‐DMBI) (−2.36 eV), which can result in a larger offset between the SOMO of dopant and lowest unoccupied molecular orbital (LUMO) of n‐type polymers, though that effect may not be dominant in the present work. The doped polymer films exhibit higher Seebeck coefficient and power factor than films using N‐DMBI at the same doping levels or similar electrical conductivity levels. Moreover, TP‐DMBI doped polymer films offer much higher electron mobility of up to 0.53 cm2 V−1 s−1than films with N‐DMBI doping, demonstrating the potential of TP‐DMBI, and 3,4,5‐trialkoxy DMBIs more broadly, for high performance n‐type organic thermoelectrics. -
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Abstract Achieving high electrical conductivity and thermoelectric power factor simultaneously for n‐type organic thermoelectrics is still challenging. By constructing two new acceptor‐acceptor n‐type conjugated polymers with different backbones and introducing the 3,4,5‐trimethoxyphenyl group to form the new n‐type dopant 1,3‐dimethyl‐2‐(3,4,5‐trimethoxyphenyl)‐2,3‐dihydro‐1
H ‐benzo[d]imidazole (TP‐DMBI), high electrical conductivity of 11 S cm−1and power factor of 32 μW m−1 K−2are achieved. Calculations using Density Functional Theory show that TP‐DMBI presents a higher singly occupied molecular orbital (SOMO) energy level of −1.94 eV than that of the common dopant 4‐(1, 3‐dimethyl‐2, 3‐dihydro‐1H ‐benzoimidazol‐2‐yl) phenyl) dimethylamine (N‐DMBI) (−2.36 eV), which can result in a larger offset between the SOMO of dopant and lowest unoccupied molecular orbital (LUMO) of n‐type polymers, though that effect may not be dominant in the present work. The doped polymer films exhibit higher Seebeck coefficient and power factor than films using N‐DMBI at the same doping levels or similar electrical conductivity levels. Moreover, TP‐DMBI doped polymer films offer much higher electron mobility of up to 0.53 cm2 V−1 s−1than films with N‐DMBI doping, demonstrating the potential of TP‐DMBI, and 3,4,5‐trialkoxy DMBIs more broadly, for high performance n‐type organic thermoelectrics.
