Xiao, Jun, Wang, Ying, Wang, Hua, Pemmaraju, C. D., Wang, Siqi, Muscher, Philipp, Sie, Edbert J., Nyby, Clara M., Devereaux, Thomas P., Qian, Xiaofeng, Zhang, Xiang, and Lindenberg, Aaron M. Berry curvature memory through electrically driven stacking transitions. Retrieved from https://par.nsf.gov/biblio/10223604. Nature Physics 16.10 Web. doi:10.1038/s41567-020-0947-0.

Xiao, Jun, Wang, Ying, Wang, Hua, Pemmaraju, C. D., Wang, Siqi, Muscher, Philipp, Sie, Edbert J., Nyby, Clara M., Devereaux, Thomas P., Qian, Xiaofeng, Zhang, Xiang, & Lindenberg, Aaron M. Berry curvature memory through electrically driven stacking transitions. Nature Physics, 16 (10). Retrieved from https://par.nsf.gov/biblio/10223604. https://doi.org/10.1038/s41567-020-0947-0

Xiao, Jun, Wang, Ying, Wang, Hua, Pemmaraju, C. D., Wang, Siqi, Muscher, Philipp, Sie, Edbert J., Nyby, Clara M., Devereaux, Thomas P., Qian, Xiaofeng, Zhang, Xiang, and Lindenberg, Aaron M. "Berry curvature memory through electrically driven stacking transitions". Nature Physics 16 (10). Country unknown/Code not available. https://doi.org/10.1038/s41567-020-0947-0. https://par.nsf.gov/biblio/10223604.

@article{osti_10223604,
place = {Country unknown/Code not available}, title = {Berry curvature memory through electrically driven stacking transitions}, url = {https://par.nsf.gov/biblio/10223604}, DOI = {10.1038/s41567-020-0947-0}, abstractNote = {}, journal = {Nature Physics}, volume = {16}, number = {10}, author = {Xiao, Jun and Wang, Ying and Wang, Hua and Pemmaraju, C. D. and Wang, Siqi and Muscher, Philipp and Sie, Edbert J. and Nyby, Clara M. and Devereaux, Thomas P. and Qian, Xiaofeng and Zhang, Xiang and Lindenberg, Aaron M.}, editor = {null} }