Search for: All records

Abstract Van der Waals (vdW) ferroelectrics have attracted significant attention for their potential in next-generation nano-electronics. Two-dimensional (2D) group-IV monochalcogenides have emerged as a promising candidate due to their strong room temperature in-plane polarization down to a monolayer limit. However, their polarization is strongly coupled with the lattice strain and stacking orders, which impact their electronic properties. Here, we utilize four-dimensional scanning transmission electron microscopy (4D-STEM) to simultaneously probe the in-plane strain and out-of-plane stacking in vdW SnSe. Specifically, we observe large lattice strain up to 4% with a gradient across ~50 nm to compensate lattice mismatch at domain walls, mitigating defects initiation. Additionally, we discover the unusual ferroelectric-to-antiferroelectric domain walls stabilized by vdW force and may lead to anisotropic nonlinear optical responses. Our findings provide a comprehensive understanding of in-plane and out-of-plane structures affecting domain properties in vdW SnSe, laying the foundation for domain wall engineering in vdW ferroelectrics. 

Antimony selenide (Sb2Se3) is a promising material for solar energy conversion due to its low toxicity, high stability, and excellent light absorption capabilities. However, Sb2Se3 films produced via physical vapor deposition often exhibit Se-deficient surfaces, which result in a high carrier recombination and poor device performance. The conventional selenization process was used to address selenium loss in Sb2Se3 solar cells with a substrate configuration. However, this traditional selenization method is not suitable for superstrated Sb2Se3 devices with the window layer buried underneath the Sb2Se3 light absorber layer, as it can lead to significant diffusion of the window layer material into Sb2Se3 and damage the device. In this work, we have demonstrated a rapid thermal selenization (RTS) technique that can effectively selenize the Sb2Se3 absorber layer while preventing the S diffusion from the buried CdS window layer into the Sb2Se3 absorber layer. The RTS technique significantly reduces carrier recombination loss and carrier transport resistance and can achieve the highest efficiency of 8.25%. Overall, the RTS method presents a promising approach for enhancing low-dimensional chalcogenide thin films for emerging superstrate chalcogenide solar cell applications. 

Thanks to the rapid advances in artificial intelligence, AI for science (AI4Science) has emerged as one of the new promising research directions for modern science and engineering. In this review, we focus on recent efforts to develop knowledge-driven Bayesian learning and experimental design methods for accelerating the discovery of novel functional materials as well as enhancing the understanding of composition-process-structure-property relationships. We specifically discuss the challenges and opportunities in integrating prior scientific knowledge and physics principles with AI and machine learning (ML) models for accelerating materials and knowledge discovery. The current state-of-the-art methods in knowledge-based prior construction, model fusion, uncertainty quantification, optimal experimental design, and symbolic regression are detailed in the review, along with several detailed case studies and results in materials discovery. 

Strong coupling between light and mechanical strain forms the foundation for next-generation optical micro- and nano-electromechanical systems. Such optomechanical responses in two-dimensional materials present novel types of functionalities arising from the weak van der Waals bond between atomic layers. Here, by using structure-sensitive megaelectronvolt ultrafast electron diffraction, we report the experimental observation of optically driven ultrafast in-plane strain in the layered group IV monochalcogenide germanium sulfide (GeS). Surprisingly, the photoinduced structural deformation exhibits strain amplitudes of order 0.1% with a 10 ps fast response time and a significant in-plane anisotropy between zigzag and armchair crystallographic directions. Rather than arising due to heating, experimental and theoretical investigations suggest deformation potentials caused by electronic density redistribution and converse piezoelectric effects generated by photoinduced electric fields are the dominant contributors to the observed dynamic anisotropic strains. Our observations define new avenues for ultrafast optomechanical control and strain engineering within functional devices. 

Abstract Nonlinear light–matter interaction, as the core of ultrafast optics, bulk photovoltaics, nonlinear optical sensing and imaging, and efficient generation of entangled photons, has been traditionally studied by first-principles theoretical methods with the sum-over-states approach. However, this indirect method often suffers from the divergence at band degeneracy and optical zeros as well as convergence issues and high computation costs when summing over the states. Here, using shift vector and shift current conductivity tensor as an example, we present a gauge-invariant generalized approach for efficient and direct calculations of nonlinear optical responses by representing interband Berry curvature, quantum metric, and shift vector in a generalized Wilson loop. This generalized Wilson loop method avoids the above cumbersome challenges and allows for easy implementation and efficient calculations. More importantly, the Wilson loop representation provides a succinct geometric interpretation of nonlinear optical processes and responses based on quantum geometric tensors and quantum geometric potentials and can be readily applied to studying other excited-state responses.