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Title: Photophysics and Electronic Structure of Lateral Graphene/MoS 2 and Metal/MoS 2 Junctions
Award ID(s):
1729338
PAR ID:
10223647
Author(s) / Creator(s):
; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; more » ; « less
Date Published:
Journal Name:
ACS Nano
Volume:
14
Issue:
12
ISSN:
1936-0851
Page Range / eLocation ID:
16663 to 16671
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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  1. Memristors are promising candidates for constructing neural networks. However, their dissimilar working mechanism to that of the addressing transistors can result in a scaling mismatch, which may hinder efficient integration. Here, we demonstrate two-terminal MoS2 memristors that work with a charge-based mechanism similar to that in transistors, which enables the homogeneous integration with MoS2 transistors to realize one-transistor-one-memristor addressable cells for assembling programmable network. The homogenously integrated cells are implemented in a 2×2 network array to demonstrate the enabled addressability and programmability. The potential for assembling scalable network is evaluated in a simulated neural network using obtained realistic device parameters, which achieves over 91% pattern recognition accuracy. This study also reveals a generic mechanism and strategy that can be applied to other semiconducting devices for the engineering and homogeneous integration of memristive systems. 
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  2. null (Ed.)