Lattice deformation via substrate‐driven mechanical straining of 2D materials can profoundly modulate their bandgap by altering the electronic band structure. However, such bandgap modulation is typically short‐lived and weak due to substrate slippage, which restores lattice symmetry and limits strain transfer. Here, it is shown that a non‐volatile thermomechanical strain induced during hot‐press synthesis results in giant modulation of the inherent bandgap in quasi‐2D tellurium nanoflakes (TeNFs). By leveraging the thermal expansion coefficient (TEC) mismatch and maintaining a pressure‐enforced non‐slip condition between TeNFs and the substrate, a non‐volatile and anisotropic compressive strain is attained with ε = −4.01% along zigzag lattice orientation and average biaxial strain of −3.46%. This results in a massive permanent bandgap modulation of 2.3 eV at a rate S (ΔEg) of up to 815 meV/% (TeNF/ITO), exceeding the highest reported values by 200%. Furthermore, TeNFs display long‐term strain retention and exhibit robust band‐to‐band blue photoemission featuring an intrinsic quantum efficiency of 80%. The results show that non‐volatile thermomechanical straining is an efficient substrate‐based bandgap modulation technique scalable to other 2D semiconductors and van der Waals materials for on‐demand nano‐optoelectronic properties.
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Strain engineering photonic properties in monolayer semiconductors through mechanically-reconfigurable wrinkling
Inhomogeneous and three-dimensional strain engineering in two dimensional materials opens up new avenues to straintronic devices for control strain sensitive photonic properties. Here we present a method to tune strain by wrinkling monolayer WSe2 attached to a 15 nm thick ALD support layer and compressing the heterostructure on a soft substrate. The ALD film stiffens the 2D material, enabling optically resolvable micron scale wrinkling rather than nanometer scale crumpling and folding. Using photoluminescence spectroscopy, we show the wrinkling introduces periodic modulation of the bandgap by 47 meV, corresponding with strain modulation from +0.67% tensile strain at the wrinkle crest to -0.31% compressive strain at the trough. Moreover, we show that cycling the substrate strain mechanically reconfigures the magnitude and direction of wrinkling and resulting band tuning. These results pave the way towards stretchable multifuctional devices based on strained 2D materials.
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- Award ID(s):
- 1720633
- PAR ID:
- 10224817
- Editor(s):
- Congreve, Daniel; Nielsen, Christian; Musser, Andrew J.
- Date Published:
- Journal Name:
- Proc. of SPIE Physical Chemistry of Semiconductor Materials and Interfaces IX
- Volume:
- 11464
- Issue:
- 1146404
- Page Range / eLocation ID:
- 1-7
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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