The mid-IR spectroscopic properties of doped low-phonon and crystals grown by the Bridgman technique have been investigated. Using optical excitations at and , both crystals exhibited IR emissions at , , , and at room temperature. The mid-IR emission at 4.5 µm, originating from the transition, showed a long emission lifetime of for doped , whereas doped exhibited a shorter lifetime of . The measured emission lifetimes of the state were nearly independent of the temperature, indicating a negligibly small nonradiative decay rate through multiphonon relaxation, as predicted by the energy-gap law for low-maximum-phonon energy hosts. The room temperature stimulated emission cross sections for the transition in doped and were determined to be and , respectively. The results of Judd–Ofelt analysis are presented and discussed.
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Strain tuning of the emission axis of quantum emitters in an atomically thin semiconductor
Strain engineering is a natural route to control the electronic and optical properties of two-dimensional (2D) materials. Recently, 2D semiconductors have also been demonstrated as an intriguing host of strain-induced quantum-confined emitters with unique valley properties inherited from the host semiconductor. Here, we study the continuous and reversible tuning of the light emitted by such localized emitters in a monolayer tungsten diselenide embedded in a van der Waals heterostructure. Biaxial strain is applied on the emitters via strain transfer from a lead magnesium niobate–lead titanate (PMN-PT) piezoelectric substrate. Efficient modulation of the emission energy of several localized emitters up to 10 meV has been demonstrated on application of a voltage on the piezoelectric substrate. Further, we also find that the emission axis rotates by as the magnitude of the biaxial strain is varied on these emitters. These results elevate the prospect of using all electrically controlled devices where the property of the localized emitters in a 2D host can be engineered with elastic fields for an integrated opto-electronics and nano-photonics platform.
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- Award ID(s):
- 1839155
- PAR ID:
- 10155523
- Publisher / Repository:
- Optical Society of America
- Date Published:
- Journal Name:
- Optica
- Volume:
- 7
- Issue:
- 6
- ISSN:
- 2334-2536
- Format(s):
- Medium: X Size: Article No. 580
- Size(s):
- Article No. 580
- Sponsoring Org:
- National Science Foundation
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