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Title: Why In 2 O 3 Can Make 0.7 nm Atomic Layer Thin Transistors
Award ID(s):
2016453 1565822
NSF-PAR ID:
10226869
Author(s) / Creator(s):
; ; ; ; ; ; ; ; ;
Date Published:
Journal Name:
Nano Letters
Volume:
21
Issue:
1
ISSN:
1530-6984
Page Range / eLocation ID:
500 to 506
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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