Next‐generation electronics and energy technologies can now be developed as a result of the design, discovery, and development of novel, environmental friendly lead (Pb)‐free ferroelectric materials with improved characteristics and performance. However, there have only been a few reports of such complex materials’ design with multi‐phase interfacial chemistry, which can facilitate enhanced properties and performance. In this context, herein, novel lead‐free piezoelectric materials (1‐
We report on the tunable and enhanced dielectric properties of tungsten (W) incorporated gallium oxide (Ga2O3) polycrystalline electroceramics for energy and power electronic device applications. The W‐incorporated Ga2O3(Ga2−2xWxO3, 0.00 ≤ x ≤ 0.20; GWO) compounds were synthesized by the high‐temperature solid‐state chemical reaction method by varying the W‐content. The fundamental aspects of the dielectric properties in correlation with the crystal structure, phase, and microstructure of the GWO polycrystalline compounds has been investigated in detail. A detailed study performed ascertains the W‐induced changes in the dielectric constant, loss tangent (tan
- Award ID(s):
- 1827745
- NSF-PAR ID:
- 10450007
- Publisher / Repository:
- Wiley Blackwell (John Wiley & Sons)
- Date Published:
- Journal Name:
- Engineering Reports
- Volume:
- 3
- Issue:
- 1
- ISSN:
- 2577-8196
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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