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Title: Accumulation-Type Ohmic van der Waals Contacts to Nearly Intrinsic WSe 2 Nanosheet-Based Channels: Implications for Field-Effect Transistors
Authors:
; ; ; ; ; ; ; ;
Award ID(s):
2004445
Publication Date:
NSF-PAR ID:
10229599
Journal Name:
ACS Applied Nano Materials
ISSN:
2574-0970
Sponsoring Org:
National Science Foundation
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