Accumulation-Type Ohmic van der Waals Contacts to Nearly Intrinsic WSe 2 Nanosheet-Based Channels: Implications for Field-Effect Transistors
- Award ID(s):
- 2004445
- NSF-PAR ID:
- 10229599
- Date Published:
- Journal Name:
- ACS Applied Nano Materials
- ISSN:
- 2574-0970
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation