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Title: Accumulation-Type Ohmic van der Waals Contacts to Nearly Intrinsic WSe 2 Nanosheet-Based Channels: Implications for Field-Effect Transistors
Award ID(s):
2004445
NSF-PAR ID:
10229599
Author(s) / Creator(s):
; ; ; ; ; ; ; ;
Date Published:
Journal Name:
ACS Applied Nano Materials
ISSN:
2574-0970
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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