Layered and Cubic Semiconductors A Ga M ′ Q 4 ( A + = K + , Rb + , Cs + , Tl + ; M ′ 4+ = Ge 4+ , Sn 4+ ; Q 2– = S 2– , Se 2– ) and High Third-Harmonic Generation

Friedrich, Daniel; Byun, Hye Ryung; Hao, Shiqiang; Patel, Shane; Wolverton, Chris; Jang, Joon Ik; Kanatzidis, Mercouri G.

doi:10.1021/jacs.0c08638

Silicon carbide (SiC) has great potential for optomechanical applications due to its outstanding optical and mechanical properties. However, challenges associated with SiC nanofabrication have constrained its adoption in optomechanical devices, as embodied by the considerable optical loss or lack of integrated optical access in existing mechanical resonators. In this work, we overcome such challenges and demonstrate a low-loss, ultracompact optomechanical resonator in an integrated 4H-SiC-on-insulator (4H-SiCOI) photonic platform for the first time, to our knowledge. Based on a suspended 4.3-μm-radius microdisk, the SiC optomechanical resonator features low optical loss (<1 dB/cm), a high mechanical frequencyf_mof 0.95×10⁹ Hz, a mechanical quality factorQ_mof 1.92×10⁴, and a footprint of <1×10⁻⁵ mm². The correspondingf_m·Q_mproduct is estimated to be 1.82×10¹³ Hz, which is among the highest reported values of optomechanical cavities tested in ambient environment at room temperature. In addition, the strong optomechanical coupling in the SiC microdisk enables coherent regenerative optomechanical oscillations at a threshold optical dropped power of 14 μW, which also supports efficient harmonic generation at increased power levels. With such competitive performance, we envision a range of chip-scale optomechanical applications to be enabled by the low-loss 4H-SiCOI platform.

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