Yeung, Gavin, and Wolden, Colin A. Controlling conduction band alignment and carrier concentration in gallium-doped magnesium zinc oxide by reactive cosputtering. Retrieved from https://par.nsf.gov/biblio/10232095. Journal of Vacuum Science & Technology A 39.2 Web. doi:10.1116/6.0000784.

Yeung, Gavin, & Wolden, Colin A. Controlling conduction band alignment and carrier concentration in gallium-doped magnesium zinc oxide by reactive cosputtering. Journal of Vacuum Science & Technology A, 39 (2). Retrieved from https://par.nsf.gov/biblio/10232095. https://doi.org/10.1116/6.0000784

Yeung, Gavin, and Wolden, Colin A. "Controlling conduction band alignment and carrier concentration in gallium-doped magnesium zinc oxide by reactive cosputtering". Journal of Vacuum Science & Technology A 39 (2). Country unknown/Code not available. https://doi.org/10.1116/6.0000784. https://par.nsf.gov/biblio/10232095.

@article{osti_10232095,
place = {Country unknown/Code not available}, title = {Controlling conduction band alignment and carrier concentration in gallium-doped magnesium zinc oxide by reactive cosputtering}, url = {https://par.nsf.gov/biblio/10232095}, DOI = {10.1116/6.0000784}, abstractNote = {}, journal = {Journal of Vacuum Science & Technology A}, volume = {39}, number = {2}, author = {Yeung, Gavin and Wolden, Colin A.}, editor = {null} }