Pentapati, Sai, Perumal, Rakesh, Khandelwal, Sourabh, Khan, Asif I., and Lim, Sung Kyu. Optimal Ferroelectric Parameters for Negative Capacitance Field-Effect Transistors Based on Full-Chip Implementations—Part II: Scaling of the Supply Voltage. Retrieved from https://par.nsf.gov/biblio/10243517. IEEE Transactions on Electron Devices 67.1 Web. doi:10.1109/TED.2019.2955010.

Pentapati, Sai, Perumal, Rakesh, Khandelwal, Sourabh, Khan, Asif I., & Lim, Sung Kyu. Optimal Ferroelectric Parameters for Negative Capacitance Field-Effect Transistors Based on Full-Chip Implementations—Part II: Scaling of the Supply Voltage. IEEE Transactions on Electron Devices, 67 (1). Retrieved from https://par.nsf.gov/biblio/10243517. https://doi.org/10.1109/TED.2019.2955010

Pentapati, Sai, Perumal, Rakesh, Khandelwal, Sourabh, Khan, Asif I., and Lim, Sung Kyu. "Optimal Ferroelectric Parameters for Negative Capacitance Field-Effect Transistors Based on Full-Chip Implementations—Part II: Scaling of the Supply Voltage". IEEE Transactions on Electron Devices 67 (1). Country unknown/Code not available. https://doi.org/10.1109/TED.2019.2955010. https://par.nsf.gov/biblio/10243517.

@article{osti_10243517,
place = {Country unknown/Code not available}, title = {Optimal Ferroelectric Parameters for Negative Capacitance Field-Effect Transistors Based on Full-Chip Implementations—Part II: Scaling of the Supply Voltage}, url = {https://par.nsf.gov/biblio/10243517}, DOI = {10.1109/TED.2019.2955010}, abstractNote = {}, journal = {IEEE Transactions on Electron Devices}, volume = {67}, number = {1}, author = {Pentapati, Sai and Perumal, Rakesh and Khandelwal, Sourabh and Khan, Asif I. and Lim, Sung Kyu}, editor = {null} }