Ogidi-Ekoko, Onoriode N., Goodrich, Justin C., Howzen, Alexandra J., Peart, Matthew R., Strandwitz, Nicholas C., Wierer, Jonathan J., and Tansu, Nelson. Electrical properties of MgO/GaN metal-oxide-semiconductor structures. Retrieved from https://par.nsf.gov/biblio/10249414. Solid-State Electronics 172.C Web. doi:10.1016/j.sse.2020.107881.

Ogidi-Ekoko, Onoriode N., Goodrich, Justin C., Howzen, Alexandra J., Peart, Matthew R., Strandwitz, Nicholas C., Wierer, Jonathan J., & Tansu, Nelson. Electrical properties of MgO/GaN metal-oxide-semiconductor structures. Solid-State Electronics, 172 (C). Retrieved from https://par.nsf.gov/biblio/10249414. https://doi.org/10.1016/j.sse.2020.107881

Ogidi-Ekoko, Onoriode N., Goodrich, Justin C., Howzen, Alexandra J., Peart, Matthew R., Strandwitz, Nicholas C., Wierer, Jonathan J., and Tansu, Nelson. "Electrical properties of MgO/GaN metal-oxide-semiconductor structures". Solid-State Electronics 172 (C). Country unknown/Code not available. https://doi.org/10.1016/j.sse.2020.107881. https://par.nsf.gov/biblio/10249414.

@article{osti_10249414,
place = {Country unknown/Code not available}, title = {Electrical properties of MgO/GaN metal-oxide-semiconductor structures}, url = {https://par.nsf.gov/biblio/10249414}, DOI = {10.1016/j.sse.2020.107881}, abstractNote = {}, journal = {Solid-State Electronics}, volume = {172}, number = {C}, author = {Ogidi-Ekoko, Onoriode N. and Goodrich, Justin C. and Howzen, Alexandra J. and Peart, Matthew R. and Strandwitz, Nicholas C. and Wierer, Jonathan J. and Tansu, Nelson}, }