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1. Ultra-high extinction ratio polarization beam splitter with extreme skin-depth waveguide

   https://doi.org/10.1364/OL.420824  

   Ahmed, Syed_Z; Ahmed, Ishtiaque; Mia, Md_Borhan; Jaidye, Nafiz; Kim, Sangsik (April 2021, Optics Letters)

   In this Letter, we present a high extinction ratio and compact on-chip polarization beam splitter (PBS), based on an extreme skin-depth (eskid) waveguide. Subwavelength-scale gratings form an effectively anisotropic metamaterial cladding and introduce a large birefringence. The anisotropic dielectric perturbation of the metamaterial cladding suppresses the TE polarization extinction via exceptional coupling, while the large birefringence efficiently cross-couples the TM mode, thus reducing the coupling length. We demonstrated the eskid-PBS on a silicon-on-insulator platform and achieved an ultra-high extinction ratio PBS ( $\approx <\#comment/>60\mathrm{d}\mathrm{B}$for TE and $\approx <\#comment/>48\mathrm{d}\mathrm{B}$for TM) with a compact coupling length ( $\approx <\#comment/>14.5\text{µ<\#comment/>}\mathrm{m}$). The insertion loss is also negligible ( $<<\#comment/>0.6\mathrm{d}\mathrm{B}$). The bandwidth is $><\#comment/>80$(30) nm for the TE (TM) extinction ratio $><\#comment/>20\mathrm{d}\mathrm{B}$. Our ultra-high extinction ratio PBS is crucial in implementing efficient polarization diversity circuits, especially where a high degree of polarization distinguishability is necessary, such as photonic quantum information processing. 

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2. Mid-IR spectroscopy of Er ³⁺ doped low-phonon CsCdCl ₃ and CsPbCl ₃ crystals

   https://doi.org/10.1364/JOSAB.470152  

   Brown, Ei_Ei; Fleischman, Zackery_D; McKay, Jason; Hommerich, Uwe; Kabir, Al_Amin; Riggins, Jazmine; Trivedi, Sudhir; Dubinskii, Mark (September 2022, Journal of the Optical Society of America B)

   The mid-IR spectroscopic properties of ${\mathrm{E}\mathrm{r}}^{3+}$doped low-phonon ${\mathrm{C}\mathrm{s}\mathrm{C}\mathrm{d}\mathrm{C}\mathrm{l}}_3$and ${\mathrm{C}\mathrm{s}\mathrm{P}\mathrm{b}\mathrm{C}\mathrm{l}}_3$crystals grown by the Bridgman technique have been investigated. Using optical excitations at $\sim <\#comment/>800\mathrm{n}\mathrm{m}$and $\sim <\#comment/>660\mathrm{n}\mathrm{m}$, both crystals exhibited IR emissions at $\sim <\#comment/>1.55$, $\sim <\#comment/>2.75$, $\sim <\#comment/>3.5$, and $\sim <\#comment/>4.5\text{µ<\#comment/>}\mathrm{m}$at room temperature. The mid-IR emission at 4.5 µm, originating from the ${}^4{\mathrm{I}}_{9/2}\to <\#comment/>{}^4{\mathrm{I}}_{11/2}$transition, showed a long emission lifetime of $\sim <\#comment/>11.6\mathrm{m}\mathrm{s}$for ${\mathrm{E}\mathrm{r}}^{3+}$doped ${\mathrm{C}\mathrm{s}\mathrm{C}\mathrm{d}\mathrm{C}\mathrm{l}}_3$, whereas ${\mathrm{E}\mathrm{r}}^{3+}$doped ${\mathrm{C}\mathrm{s}\mathrm{P}\mathrm{b}\mathrm{C}\mathrm{l}}_3$exhibited a shorter lifetime of $\sim <\#comment/>1.8\mathrm{m}\mathrm{s}$. The measured emission lifetimes of the ${}^4{\mathrm{I}}_{9/2}$state were nearly independent of the temperature, indicating a negligibly small nonradiative decay rate through multiphonon relaxation, as predicted by the energy-gap law for low-maximum-phonon energy hosts. The room temperature stimulated emission cross sections for the ${}^4{\mathrm{I}}_{9/2}\to <\#comment/>{}^4{\mathrm{I}}_{11/2}$transition in ${\mathrm{E}\mathrm{r}}^{3+}$doped ${\mathrm{C}\mathrm{s}\mathrm{C}\mathrm{d}\mathrm{C}\mathrm{l}}_3$and ${\mathrm{C}\mathrm{s}\mathrm{P}\mathrm{b}\mathrm{C}\mathrm{l}}_3$were determined to be $\sim <\#comment/>0.14\times <\#comment/>{10}^{-<\#comment/>20}{\mathrm{c}\mathrm{m}}^2$and $\sim <\#comment/>0.41\times <\#comment/>{10}^{-<\#comment/>20}{\mathrm{c}\mathrm{m}}^2$, respectively. The results of Judd–Ofelt analysis are presented and discussed. 

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3. High-performance electron-blocking-layer-free deep ultraviolet light-emitting diodes implementing a strip-in-a-barrier structure

   https://doi.org/10.1364/OL.400917  

   Velpula, Ravi_Teja; Jain, Barsha; Velpula, Swetha; Nguyen, Hoang-Duy; Nguyen, Hieu_Pham_Trung (September 2020, Optics Letters)

   In this Letter, the electron-blocking-layer (EBL)-free AlGaN ultraviolet (UV) light-emitting diodes (LEDs) using a strip-in-a-barrier structure have been proposed. The quantum barrier (QB) structures are systematically engineered by integrating a 1 nm intrinsic ${\mathrm{A}\mathrm{l}}_x{\mathrm{G}\mathrm{a}}_{(1-<\#comment/>x)}\mathrm{N}$strip into the middle of QBs. The resulted structures exhibit significantly reduced electron leakage and improved hole injection into the active region, thus generating higher carrier radiative recombination. Our study shows that the proposed structure improves radiative recombination by $\sim <\#comment/>220\mathrm{\%<\#comment/>}$, reduces electron leakage by $\sim <\#comment/>11$times, and enhances optical power by $\sim <\#comment/>225\mathrm{\%<\#comment/>}$at 60 mA current injection compared to a conventional AlGaN EBL LED structure. Moreover, the EBL-free strip-in-a-barrier UV LED records the maximum internal quantum efficiency (IQE) of $\sim <\#comment/>61.5\mathrm{\%<\#comment/>}$which is $\sim <\#comment/>72\mathrm{\%<\#comment/>}$higher, and IQE droop is $\sim <\#comment/>12.4\mathrm{\%<\#comment/>}$, which is $\sim <\#comment/>333\mathrm{\%<\#comment/>}$less compared to the conventional AlGaN EBL LED structure at $\sim <\#comment/>284.5\mathrm{n}\mathrm{m}$wavelength. Hence, the proposed EBL-free AlGaN LED is the potential solution to enhance the optical power and produce highly efficient UV emitters. 

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4. Large-area, high-numerical-aperture multi-level diffractive lens via inverse design

   https://doi.org/10.1364/OPTICA.388697  

   Meem, Monjurul; Banerji, Sourangsu; Pies, Christian; Oberbiermann, Timo; Majumder, Apratim; Sensale-Rodriguez, Berardi; Menon, Rajesh (March 2020, Optica)

   Flat lenses enable thinner, lighter, and simpler imaging systems. However, large-area and high-NA flat lenses have been elusive due to computational and fabrication challenges. Here we applied inverse design to create a multi-level diffractive lens (MDL) with thickness $<<\#comment/>1.35\text{µ<\#comment/>}\mathrm{m}$, diameter of 4.13 mm, and $\mathrm{N}\mathrm{A}=0.9$at wavelength of 850 nm (bandwidth $\sim <\#comment/>35\mathrm{n}\mathrm{m}$). Since the MDL is created in polymer, it can be cost-effectively replicated via imprint lithography. 

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5. Strong optomechanical interactions with long-lived fundamental acoustic waves

   https://doi.org/10.1364/OPTICA.476764  

   Xu, Wendao; Iyer, Arjun; Jin, Lei; Set, Sze_Y; Renninger, William_H (January 2023, Optica)

   Traveling-wave optomechanical interactions, known as Brillouin interactions, have now been established as a powerful and versatile resource for photonic sources, sensors, and radio-frequency processors. However, established Brillouin-based interactions with sufficient interaction strengths involve short phonon lifetimes, which critically limit their performance for applications, including radio-frequency filtering and optomechanical storage devices. Here, we investigate a new paradigm of optomechanical interactions with tightly confined fundamental acoustic modes, which enables the unique and desirable combination of high optomechanical coupling, long phonon lifetimes, tunable phonon frequencies, and single-sideband amplification. Using sensitive four-wave mixing spectroscopy controlling for noise and spatial mode coupling, optomechanical interactions with long $><\#comment/>2\text{µ<\#comment/>}\mathrm{s}$phonon lifetimes and strong $><\#comment/>400{\mathrm{W}}^{-<\#comment/>1}{\mathrm{m}}^{-<\#comment/>1}$coupling are observed in a tapered fiber. In addition, we demonstrate novel phonon self-interference effects resulting from the unique combination of an axially varying device geometry with long phonon lifetimes. A generalized theoretical model, in excellent agreement with experiments, is developed with broad applicability to inhomogeneous optomechanical systems. 

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