Zhang, Weiwei, and van Duin, Adri C. Atomistic-Scale Simulations of the Graphene Growth on a Silicon Carbide Substrate Using Thermal Decomposition and Chemical Vapor Deposition. Retrieved from https://par.nsf.gov/biblio/10251268. Chemistry of Materials 32.19 Web. doi:10.1021/acs.chemmater.0c02121.

Zhang, Weiwei, & van Duin, Adri C. Atomistic-Scale Simulations of the Graphene Growth on a Silicon Carbide Substrate Using Thermal Decomposition and Chemical Vapor Deposition. Chemistry of Materials, 32 (19). Retrieved from https://par.nsf.gov/biblio/10251268. https://doi.org/10.1021/acs.chemmater.0c02121

Zhang, Weiwei, and van Duin, Adri C. "Atomistic-Scale Simulations of the Graphene Growth on a Silicon Carbide Substrate Using Thermal Decomposition and Chemical Vapor Deposition". Chemistry of Materials 32 (19). Country unknown/Code not available. https://doi.org/10.1021/acs.chemmater.0c02121. https://par.nsf.gov/biblio/10251268.

@article{osti_10251268,
place = {Country unknown/Code not available}, title = {Atomistic-Scale Simulations of the Graphene Growth on a Silicon Carbide Substrate Using Thermal Decomposition and Chemical Vapor Deposition}, url = {https://par.nsf.gov/biblio/10251268}, DOI = {10.1021/acs.chemmater.0c02121}, abstractNote = {}, journal = {Chemistry of Materials}, volume = {32}, number = {19}, author = {Zhang, Weiwei and van Duin, Adri C.}, editor = {null} }