Large-size free-standing single-crystal β-Ga 2 O 3 membranes fabricated by hydrogen implantation and lift-off
In this paper, we demonstrated large-size free-standing single-crystal β-Ga 2 O 3 NMs fabricated by the hydrogen implantation and lift-off process directly from MOCVD grown β-Ga 2 O 3 epifilms on native substrates. The optimum implantation conditions were simulated with a Monte-Carlo simulation method to obtain a high hydrogen concentration with a narrow ion distribution at the desired depth. Two as grown β-Ga 2 O 3 samples with different orientations ([100] and [001]) were used to successfully create 1.2 μm thick β-Ga 2 O 3 NMs without any physical damage. These β-Ga 2 O 3 NMs were then transfer-printed onto rigid and flexible substrates such as SiC and polyimide substrates. Various material characterization studies were performed to investigate their crystal quality, surface morphologies, optical properties, mechanical properties, and bandgaps before and after the lift-off and revealed that the good material quality was maintained. This result offers several benefits in that the thickness, doping, and size of β-Ga 2 O 3 NMs can be fully controlled. Moreover, more advanced β-Ga 2 O 3 -based NM structures such as (Al x Ga 1−x ) 2 O 3 /Ga 2 O 3 heterostructure NMs can be directly created from their bulk epitaxy substrates; more »
Authors:
; ; ; ; ; ; ;
Award ID(s):
Publication Date:
NSF-PAR ID:
10273768
Journal Name:
Journal of Materials Chemistry C
Volume:
9
Issue:
19
Page Range or eLocation-ID:
6180 to 6186
ISSN:
2050-7526
1. SiC and Ga 2 O 3 are promising wide band gap semiconductors for applications in power electronics because of their high breakdown electric field and normally off operation. However, lack of a suitable dielectric material that can provide high interfacial quality remains a problem. This can potentially lead to high leakage current and conducting loss. In this work, we present a novel atomic layer deposition process to grow epitaxially Mg x Ca 1− x O dielectric layers on 4H-SiC(0001) and β-Ga 2 O 3 $\left( {\bar 201} \right)$ substrates. By tuning the composition of Mg x Ca 1− x O toward the substrate lattice constant, better interfacial epitaxy can be achieved. The interfacial and epitaxy qualities were investigated and confirmed by cross-sectional transmission electron microscopy and X-ray diffraction studies. Mg 0.72 Ca 0.28 O film showed the highest epitaxy quality on 4H-SiC(0001) because of its closest lattice match with the substrate. Meanwhile, highly textured Mg 0.25 Ca 0.75 O films can be grown on β-Ga 2 O 3 $\left( {\bar 201} \right)$ with a preferred orientation of (111).