More Like this

1. Effects of burial powder configuration on the microstructure, composition, and ion conductivity of perovskite Li 3 x La 1/3‐ x TaO 3 ion conductors

   https://doi.org/10.1111/jace.18730  

   Brummel, Ian A. ; Wynne, Kevin ; Lanford, William A. ; Ihlefeld, Jon F. ( January 2023 , Journal of the American Ceramic Society)
2. Molecular Design of Supported MoO x Catalysts with Surface TaO x Promotion for Olefin Metathesis

   https://doi.org/10.1021/acscatal.1c06000  

   Zhang, Bin ; Xiang, Shuting ; Frenkel, Anatoly I. ; Wachs, Israel E. ( March 2022 , ACS Catalysis)
3. Quantitative, Dynamic TaO x Memristor/Resistive Random Access Memory Model

   https://doi.org/10.1021/acsaelm.9b00792  

   Lee, Seung Hwan ; Moon, John ; Jeong, YeonJoo ; Lee, Jihang ; Li, Xinyi ; Wu, Huaqiang ; Lu, Wei D. ( March 2020 , ACS Applied Electronic Materials)
4. Electrical and Thermal Dynamics of Self-Oscillations in TaO x -Based Threshold Switching Devices

   https://doi.org/10.1021/acsaelm.9b00782  

   Yu, Yiqi ; Zhao, Bingyuan ; Goodwill, Jonathan M. ; Ma, Yuanzhi ; Bain, James A. ; Skowronski, Marek ( March 2020 , ACS Applied Electronic Materials)
5. Stable Metallic Enrichment in Conductive Filaments in TaO x ‐Based Resistive Switches Arising from Competing Diffusive Fluxes

   https://doi.org/10.1002/aelm.201800954  

   Ma, Yuanzhi ; Goodwill, Jonathan M. ; Li, Dasheng ; Cullen, David A. ; Poplawsky, Jonathan D. ; More, Karren L. ; Bain, James A. ; Skowronski, Marek ( April 2019 , Advanced Electronic Materials)

   Oxide‐based resistive‐switching devices hold promise for solid‐state memory technology. Information encoding is accomplished by electrically switching the device between two nonvolatile states with low and high resistance states (LRS/HRS). It is generally accepted that the change between these states is due to the motion of oxygen vacancies forming a continuous (LRS) or gapped (HRS) filament between the electrodes. Direct assessments of filaments are rare due to their small size and the difficulty of locating the filament. Electron microscopy experiments reveal the filament structure and chemistry in TaO_{2.0 ± 0.2}‐based 150 × 150 nm²devices with cross‐sectional geometry after forming with power dissipation lower than 1 mW. The filaments appear to be roughly hourglass‐shaped with a diameter of less than 10 nm and are composed of Ta‐rich and O‐poor mostly amorphous material with local compositions as Ta‐rich as TaO_0.4. The as‐formed HRS has a gap up to 10 nm wide located next to the anode and composed of nearly stoichiometric TaO_2.5. The tantalum and oxygen distribution is consistent with filaments formed by the motion of both Ta and O driven by temperature gradients (Soret effect) and an electric field. This interpretation points towards a new compact model of resistive‐switching devices.

    

   more » « less