Huang, Min, Li, Guodong, An, Qi, Zhai, Pengcheng, and Goddard, William A. Structural failure of layered thermoelectric In4Se3-δ semiconductors is dominated by shear slippage. Retrieved from https://par.nsf.gov/biblio/10275135. Acta Materialia 187.C Web. doi:10.1016/j.actamat.2020.01.045.

Huang, Min, Li, Guodong, An, Qi, Zhai, Pengcheng, & Goddard, William A. Structural failure of layered thermoelectric In4Se3-δ semiconductors is dominated by shear slippage. Acta Materialia, 187 (C). Retrieved from https://par.nsf.gov/biblio/10275135. https://doi.org/10.1016/j.actamat.2020.01.045

Huang, Min, Li, Guodong, An, Qi, Zhai, Pengcheng, and Goddard, William A. "Structural failure of layered thermoelectric In4Se3-δ semiconductors is dominated by shear slippage". Acta Materialia 187 (C). Country unknown/Code not available. https://doi.org/10.1016/j.actamat.2020.01.045. https://par.nsf.gov/biblio/10275135.

@article{osti_10275135,
place = {Country unknown/Code not available}, title = {Structural failure of layered thermoelectric In4Se3-δ semiconductors is dominated by shear slippage}, url = {https://par.nsf.gov/biblio/10275135}, DOI = {10.1016/j.actamat.2020.01.045}, abstractNote = {}, journal = {Acta Materialia}, volume = {187}, number = {C}, author = {Huang, Min and Li, Guodong and An, Qi and Zhai, Pengcheng and Goddard, William A.}, editor = {null} }