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Title: Design of a β-Ga 2 O 3 Schottky Barrier Diode With p-Type III-Nitride Guard Ring for Enhanced Breakdown
Authors:
; ;
Award ID(s):
1931652
Publication Date:
NSF-PAR ID:
10275984
Journal Name:
IEEE Transactions on Electron Devices
Volume:
67
Issue:
11
Page Range or eLocation-ID:
4842 to 4848
ISSN:
0018-9383
Sponsoring Org:
National Science Foundation
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