Design of a β-Ga 2 O 3 Schottky Barrier Diode With p-Type III-Nitride Guard Ring for Enhanced Breakdown
- Award ID(s):
- 1931652
- NSF-PAR ID:
- 10275984
- Date Published:
- Journal Name:
- IEEE Transactions on Electron Devices
- Volume:
- 67
- Issue:
- 11
- ISSN:
- 0018-9383
- Page Range / eLocation ID:
- 4842 to 4848
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation