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1. Noise processes in InAs/Ga(In)Sb Corbino structures

   https://doi.org/10.1063/1.5111626  

   Stevens, Loah A.; Li, Tingxin; Du, Rui-Rui; Natelson, Douglas (July 2019, Applied Physics Letters)
2. Ga ⁺ -focused ion beam damage in n-type Ga ₂ O ₃

   https://doi.org/10.1116/5.0099892  

   Xia, Xinyi; Al-Mamun, Nahid Sultan; Warywoba, Daudi; Ren, Fan; Haque, Aman; Pearton, S. J. (September 2022, Journal of Vacuum Science & Technology A)

   Focused Ga + ion milling of lightly Si-doped, n-type Ga 2 O 3 was performed with 2–30 kV ions at normal incidence and beam currents that were a function of beam voltage, 65 nA for 30 kV, 26 nA for 10 kV, 13 nA for 5 kV, and 7.1 nA for 2 kV, to keep the milling depth constant at 100 nm. Approximate milling rates were 15, 6, 2.75, and 1.5  μm 3 /s for 30, 10, 5, and 2 kV, respectively. The electrical effects of the ion damage were characterized by Schottky barrier height and diode ideality factor on vertical rectifier structures comprising 10  μm epitaxial n-Ga 2 O 3 on n + Ga 2 O 3 substrates, while the structural damage was imaged by transmission electron microscopy. The reverse bias leakage was largely unaffected even by milling at 30 kV beam energy, while the forward current-voltage characteristics showed significant deterioration at 5 kV, with an increase in the ideality factor from 1.25 to 2.25. The I–V characteristics no longer showed rectification for the 30 kV condition. Subsequent annealing up to 400 °C produced substantial recovery of the I–V characteristics for all beam energies and was sufficient to restore the initial ideality factor completely for beam energies up to 5 kV. Even the 30 kV-exposed rectifiers showed a recovery of the ideality factor to 1.8. The surface morphology of the ion-milled Ga 2 O 3 was smooth even at 30 kV ion energy, with no evidence for preferential sputtering of the oxygen. The surface region was not amorphized by extended ion milling (35 min) at 5 kV with the samples held at 25 °C, as determined by electron diffraction patterns, and significant recovery of the lattice order was observed after annealing at 400 °C. 

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3. Controllable Exchange Bias Effect in (Ga, Mn)As/(Ga, Mn)(As, P) Bilayers With Non-Collinear Magnetic Anisotropy

   https://doi.org/10.1109/TMAG.2020.3006876  

   Choi, Suho; Lee, Kyung Jae; Choi, Seonghoon; Chongthanaphisut, Phunvira; Bac, Seul-Ki; Lee, Sanghoon; Liu, Xinyu; Dobrowolska, M.; Furdyna, Jacek K. (February 2021, IEEE Transactions on Magnetics)

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4. Hydrogen doping in wide-bandgap amorphous In–Ga–O semiconductors

   https://doi.org/10.1039/D0TC03370G  

   Medvedeva, Julia E.; Bhattarai, Bishal (January 2020, Journal of Materials Chemistry C)

   Microscopic mechanisms of the formation of H defects and their role in passivation of under-coordinated atoms, short- and long-range structural transformations, and the resulting electronic properties of amorphous In–Ga–O with In : Ga = 6 : 4 are investigated using computationally-intensive ab initio molecular dynamics simulations and accurate density-functional calculations. The results reveal a stark difference between H-passivation in covalent Si-based and ionic oxide semiconductors. Specifically, it is found that hydrogen doping triggers an extended bond reconfiguration and rearrangement in the network of shared polyhedra in the disordered oxide lattice, resulting in energy gains that outweigh passivation of dangling O-p-orbitals. The H-induced structural changes in the coordination and morphology favor a more uniform charge density distribution in the conduction band, in accord with the improved carrier mobility measured in H-doped In–Ga–O [W. Huang et al. , Proc. Natl. Acad. Sci. U. S. A. , 2020, 117 , 18231]. A detailed structural analysis helps interpret the observed wide range of infrared frequencies associated with H defects and also demonstrate that the room-temperature stability of OH defects is affected by thermal fluctuations in the surrounding lattice, promoting bond migration and bond switching behavior within a short picosecond time frame. 

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5. Chemical Conversions within the Mo–Ga–C System: Layered Solids with Variable Ga Content

   https://doi.org/10.1021/acs.inorgchem.4c00107  

   Büchner, Carina; Kubitza, Niels; Malik, Ali M; Jamboretz, John; Riaz, Aysha A; Zhu, Yujiang; Schlueter, Christoph; McCartney, Martha R; Smith, David J; Regoutz, Anna; et al (April 2024, Inorganic Chemistry)