skip to main content
US FlagAn official website of the United States government
dot gov icon
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
https lock icon
Secure .gov websites use HTTPS
A lock ( lock ) or https:// means you've safely connected to the .gov website. Share sensitive information only on official, secure websites.

Explore Research Products in the PAR
It may take a few hours for recently added research products to appear in PAR search results.


Title: VO 2 -based micro-electro-mechanical tunable optical shutter and modulator
VO2-based MEMS tunable optical shutters are demonstrated. The design consists of a VO2-based cantilever attached to a VO2-based optical window with integrated resistive heaters for individual mechanical actuation of the cantilever structure, tuning of the optical properties of the window, or both. Optical transmittance measurements as a function of current for both heaters demonstrates that the developed devices can be used as analog optical shutters, where the intensity of a light beam can be tuned to any value within the range of VO2phase transition. A transmittance drop off 30% is shown for the optical window, with tuning capabilities greater than 30% upon actuation of the cantilever. Unlike typical mechanical shutters, these devices are not restricted to binary optical states. Optical modulation of the optical window is demonstrated with an oscillating electrical input. This produces a transmittance signal that oscillates around an average value within the range off VO2’s phase transition. For an input current signal with fixed amplitude (fel= 0.28 Hz), tuned to be at the onset of the phase transition, a transmittance modulation of 14% is shown. Similarly, by modulating the DC-offset, a transmittance modulation of VO2along the hysteresis is obtained.  more » « less
Award ID(s):
1854750
PAR ID:
10279311
Author(s) / Creator(s):
; ; ; ; ; ;
Publisher / Repository:
Optical Society of America
Date Published:
Journal Name:
Optics Express
Volume:
29
Issue:
16
ISSN:
1094-4087; OPEXFF
Format(s):
Medium: X Size: Article No. 25242
Size(s):
Article No. 25242
Sponsoring Org:
National Science Foundation
More Like this
  1. ; ; ; ; ; ; ; ; ; (, Nanoscale)
    null (Ed.)
    A phase transition material, VO 2 , with a semiconductor-to-metal transition (SMT) near 341 K (68 °C) has attracted significant research interest because of drastic changes in its electrical resistivity and optical dielectric properties. To address its application needs at specific temperatures, tunable SMT temperatures are highly desired. In this work, effective transition temperature ( T c ) tuning of VO 2 has been demonstrated via a novel Pt : VO 2 nanocomposite design, i.e. , uniform Pt nanoparticles (NPs) embedded in the VO 2 matrix. Interestingly, a bidirectional tuning has been achieved, i.e. , the transition temperature can be systematically tuned to as low as 329.16 K or as high as 360.74 K, with the average diameter of Pt NPs increasing from 1.56 to 4.26 nm. Optical properties, including transmittance ( T %) and dielectric permittivity ( ε ′) were all effectively tuned accordingly. All Pt : VO 2 nanocomposite thin films maintain reasonable SMT properties, i.e. sharp phase transition and narrow width of thermal hysteresis. The bidirectional T c tuning is attributed to two factors: the reconstruction of the band structure at the Pt : VO 2 interface and the change of the Pt : VO 2 phase boundary density. This demonstration sheds light on phase transition tuning of VO 2 at both room temperature and high temperature, which provides a promising approach for VO 2 -based novel electronics and photonics operating under specific temperatures. 
    more » « less
  2. ; ; ; ; (, Advanced Materials Technologies)
    Abstract Micrometer‐sized VO2‐based devices with integrated resistive heaters of different configurations are fabricated. Quality of the VO2films is confirmed by measuring the characteristic drop in transmittance and negative differential emissivity for these films. A two‐interface model for optical transmittance, reflectance, and absorbance is presented. This method and analytic model presents an advantage over most typically used approaches in that it does not require direct measurements of the material's optical constants to estimate transmittance. By combining the substrate and the VO2film into one layer with a reduced optical admittance, the two‐interface model is reduced to a single‐layer model. Moreover, the present work demonstrates the implementation of the developed VO2‐based devices in adaptive camouflage and shape‐converting applications. Electrical pulses are used to program different emissivity states to convert geometric shapes inside a fully integrated VO2‐based electro‐optical window. This results in the reconfiguring of thermal images to either create new shapes, or shift from one to another. 
    more » « less
  3. ; ; ; ; ; ; ; ; ; ; et al (, Advanced Physics Research)
    Abstract Mott insulator VO2exhibits an ultrafast and reversible semiconductor‐to‐metal transition (SMT) near 340 K (67 °C). In order to fulfill the multifunctional device applications, effective transition temperature (Tc) tuning as well as integrated functionality in VO2is desired. In this study, multifunctionalities including tailorable SMT characteristics, ferromagnetic (FM) integration, and magneto‐optical (MO) coupling, have been demonstrated via metal/VO2nanocomposite designs with controlled morphology, i.e., a two‐phase Ni/VO2pillar‐in‐matrix geometry and a three‐phase Au/Ni/VO2particle‐in‐matrix geometry. EvidentTcreduction of 20.4 to 54.9 K has been achieved by morphology engineering. Interestingly, the Au/Ni/VO2film achieves a record‐lowTcof 295.2 K (22.2 °C), slightly below room temperature (25 °C). The change in film morphology is also correlated with unique property tuning. Highly anisotropic magnetic and optical properties have been demonstrated in Ni/VO2film, whereas Au/Ni/VO2film exhibits isotropic properties because of the uniform distribution of Au/Ni nanoparticles. Furthermore, a strong MO coupling with enhanced magnetic coercivity and anisotropy is demonstrated for both films, indicating great potential for optically active property tuning. This demonstration opens exciting opportunities for the VO2‐based device implementation towards smart windows, next‐generation optical‐coupled switches, and spintronic devices. 
    more » « less
  4. ; ; ; ; ; ; ; ; ; ; et al (, Advanced Functional Materials)
    Abstract Vanadium dioxide (VO2) is a well‐studied Mott‐insulator because of the very abrupt physical property switching during its semiconductor‐to‐metal transition (SMT) around 341 K (68 °C). In this work, through novel oxide‐metal nanocomposite designs (i.e., Au:VO2and Pt:VO2), a very broad range of SMT temperature tuning from≈323.5 to≈366.7 K has been achieved by varying the metallic secondary phase in the nanocomposites (i.e., Au:VO2and Pt:VO2thin films, respectively). More surprisingly, the SMTTccan be further lowered to≈301.8 K (near room temperature) by reducing the Au particle size from 11.7 to 1.7 nm. All the VO2nanocomposite thin films maintain superior phase transition performance, i.e., large transition amplitude, very sharp transition, and narrow width of thermal hysteresis. Correspondingly, a twofold variation of the complex dielectric function has been demonstrated in these metal‐VO2nanocomposites. The wide range physical property tuning is attributed to the band structure reconstruction at the metal‐VO2phase boundaries. This demonstration paved a novel approach for tuning the phase transition property of Mott‐insulating materials to near room temperature transition, which is important for sensors, electrical switches, smart windows, and actuators. 
    more » « less
  5. ; ; ; ; ; ; ; (, Advanced Electronic Materials)
    Abstract Vanadium Dioxide (VO2) is a material that exhibits a phase transition from an insulating state to a metallic state at ≈68 °C. During a temperature cycle consisting of warming followed by cooling, the resistivity of VO2changes by several orders of magnitude over the course of the hysteresis loop. Using a focused laser beam (λ = 532 nm), it is shown that it is possible to optically generate micron‐sized metallic patterns within the insulating phase of a VO2planar junction which can be used to tune, on demand, the resistance of the VO2junction. A resistor network simulation is used to characterize the resulting resistance drops in the devices. These patterns persist while the base temperature is held constant within the hysteretic region while being easily removed totally by simply lowering the base temperature. Surprisingly, it is also observed that the pattern can be partially erased using an atomic force microscope (AFM) tip on the submicron scale. This erasing process can be qualitatively explained by the temperature difference between the VO2surface and the tip which acts as a local cooler. This optical and AFM resistive fine‐tuning offers the possibility of creating controllable synaptic weights between room‐temperature VO2neuristors. 
    more » « less
  • Citation Formats
  • MLA
  • APA
  • Chicago
  • BibTeX
  • Save / Share this Record
  • Send to Email