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1. Mid-IR spectroscopy of Er ³⁺ doped low-phonon CsCdCl ₃ and CsPbCl ₃ crystals

   https://doi.org/10.1364/JOSAB.470152  

   Brown, Ei_Ei; Fleischman, Zackery_D; McKay, Jason; Hommerich, Uwe; Kabir, Al_Amin; Riggins, Jazmine; Trivedi, Sudhir; Dubinskii, Mark (September 2022, Journal of the Optical Society of America B)

   The mid-IR spectroscopic properties of ${\mathrm{E}\mathrm{r}}^{3+}$doped low-phonon ${\mathrm{C}\mathrm{s}\mathrm{C}\mathrm{d}\mathrm{C}\mathrm{l}}_3$and ${\mathrm{C}\mathrm{s}\mathrm{P}\mathrm{b}\mathrm{C}\mathrm{l}}_3$crystals grown by the Bridgman technique have been investigated. Using optical excitations at $\sim <\#comment/>800\mathrm{n}\mathrm{m}$and $\sim <\#comment/>660\mathrm{n}\mathrm{m}$, both crystals exhibited IR emissions at $\sim <\#comment/>1.55$, $\sim <\#comment/>2.75$, $\sim <\#comment/>3.5$, and $\sim <\#comment/>4.5\text{µ<\#comment/>}\mathrm{m}$at room temperature. The mid-IR emission at 4.5 µm, originating from the ${}^4{\mathrm{I}}_{9/2}\to <\#comment/>{}^4{\mathrm{I}}_{11/2}$transition, showed a long emission lifetime of $\sim <\#comment/>11.6\mathrm{m}\mathrm{s}$for ${\mathrm{E}\mathrm{r}}^{3+}$doped ${\mathrm{C}\mathrm{s}\mathrm{C}\mathrm{d}\mathrm{C}\mathrm{l}}_3$, whereas ${\mathrm{E}\mathrm{r}}^{3+}$doped ${\mathrm{C}\mathrm{s}\mathrm{P}\mathrm{b}\mathrm{C}\mathrm{l}}_3$exhibited a shorter lifetime of $\sim <\#comment/>1.8\mathrm{m}\mathrm{s}$. The measured emission lifetimes of the ${}^4{\mathrm{I}}_{9/2}$state were nearly independent of the temperature, indicating a negligibly small nonradiative decay rate through multiphonon relaxation, as predicted by the energy-gap law for low-maximum-phonon energy hosts. The room temperature stimulated emission cross sections for the ${}^4{\mathrm{I}}_{9/2}\to <\#comment/>{}^4{\mathrm{I}}_{11/2}$transition in ${\mathrm{E}\mathrm{r}}^{3+}$doped ${\mathrm{C}\mathrm{s}\mathrm{C}\mathrm{d}\mathrm{C}\mathrm{l}}_3$and ${\mathrm{C}\mathrm{s}\mathrm{P}\mathrm{b}\mathrm{C}\mathrm{l}}_3$were determined to be $\sim <\#comment/>0.14\times <\#comment/>{10}^{-<\#comment/>20}{\mathrm{c}\mathrm{m}}^2$and $\sim <\#comment/>0.41\times <\#comment/>{10}^{-<\#comment/>20}{\mathrm{c}\mathrm{m}}^2$, respectively. The results of Judd–Ofelt analysis are presented and discussed. 

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2. Spectroscopic study of the 4 f ⁷ 6 s ^{2 8} S 7/2∘−4 f ⁷ ( ⁸ S ^∘ )6 s 6 p ( ¹ P ^∘ ) ⁸ P _9/2 transition in neutral europium-151 and europium-153: absolute frequency and hyperfine structure

   https://doi.org/10.1364/JOSAB.467968  

   Herd, M_T; Maruko, C.; Herzog, M_M; Brand, A.; Cannon, G.; Duah, B.; Hollin, N.; Karani, T.; Wallace, A.; Whitmore, M.; et al (September 2022, Journal of the Optical Society of America B)

   We report on spectroscopic measurements on the $4f^{7}6s^2{}^8{S}_{7/2}^{\circ <\#comment/>}\to <\#comment/>4f^7{(}^8{S}^{\circ <\#comment/>}\left)6s6p{(}^1{P}^{\circ <\#comment/>}\right){}^8{P}_{9/2}$transition in neutral europium-151 and europium-153 at 459.4 nm. The center of gravity frequencies for the 151 and 153 isotopes, reported for the first time in this paper, to our knowledge, were found to be 652,389,757.16(34) MHz and 652,386,593.2(5) MHz, respectively. The hyperfine coefficients for the $6s6p{(}^1{P}^{\circ <\#comment/>}){}^8{P}_{9/2}$state were found to be $\mathrm{A}\left(151\right)=-<\#comment/>228.84\left(2\right)\mathrm{M}\mathrm{H}\mathrm{z}$, $\mathrm{B}\left(151\right)=226.9\left(5\right)\mathrm{M}\mathrm{H}\mathrm{z}$and $\mathrm{A}\left(153\right)=-<\#comment/>101.87\left(6\right)\mathrm{M}\mathrm{H}\mathrm{z}$, $\mathrm{B}\left(153\right)=575.4\left(1.5\right)\mathrm{M}\mathrm{H}\mathrm{z}$, which all agree with previously published results except for A(153), which shows a small discrepancy. The isotope shift is found to be 3163.8(6) MHz, which also has a discrepancy with previously published results. 

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3. Modifications of ion beam sputtered tantala thin films by secondary argon and oxygen bombardment

   https://doi.org/10.1364/AO.59.00A150  

   Yang, Le; Randel, Emmett; Vajente, Gabriele; Ananyeva, Alena; Gustafson, Eric; Markosyan, Ashot; Bassiri, Riccardo; Fejer, Martin; Menoni, Carmen (January 2020, Applied Optics)

   Amorphous tantala ( ${\mathrm{T}\mathrm{a}}_2{\mathrm{O}}_5$) thin films were deposited by reactive ion beam sputtering with simultaneous low energy assist ${\mathrm{A}\mathrm{r}}^{+}$or ${\mathrm{A}\mathrm{r}}^{+}/{\mathrm{O}}_2^{+}$bombardment. Under the conditions of the experiment, the as-deposited thin films are amorphous and stoichiometric. The refractive index and optical band gap of thin films remain unchanged by ion bombardment. Around 20% improvement in room temperature mechanical loss and 60% decrease in absorption loss are found in samples bombarded with 100-eV ${\mathrm{A}\mathrm{r}}^{+}$. A detrimental influence from low energy ${\mathrm{O}}_2^{+}$bombardment on absorption loss and mechanical loss is observed. Low energy ${\mathrm{A}\mathrm{r}}^{+}$bombardment removes excess oxygen point defects, while ${\mathrm{O}}_2^{+}$bombardment introduces defects into the tantala films. 

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4. High-performance electron-blocking-layer-free deep ultraviolet light-emitting diodes implementing a strip-in-a-barrier structure

   https://doi.org/10.1364/OL.400917  

   Velpula, Ravi_Teja; Jain, Barsha; Velpula, Swetha; Nguyen, Hoang-Duy; Nguyen, Hieu_Pham_Trung (September 2020, Optics Letters)

   In this Letter, the electron-blocking-layer (EBL)-free AlGaN ultraviolet (UV) light-emitting diodes (LEDs) using a strip-in-a-barrier structure have been proposed. The quantum barrier (QB) structures are systematically engineered by integrating a 1 nm intrinsic ${\mathrm{A}\mathrm{l}}_x{\mathrm{G}\mathrm{a}}_{(1-<\#comment/>x)}\mathrm{N}$strip into the middle of QBs. The resulted structures exhibit significantly reduced electron leakage and improved hole injection into the active region, thus generating higher carrier radiative recombination. Our study shows that the proposed structure improves radiative recombination by $\sim <\#comment/>220\mathrm{\%<\#comment/>}$, reduces electron leakage by $\sim <\#comment/>11$times, and enhances optical power by $\sim <\#comment/>225\mathrm{\%<\#comment/>}$at 60 mA current injection compared to a conventional AlGaN EBL LED structure. Moreover, the EBL-free strip-in-a-barrier UV LED records the maximum internal quantum efficiency (IQE) of $\sim <\#comment/>61.5\mathrm{\%<\#comment/>}$which is $\sim <\#comment/>72\mathrm{\%<\#comment/>}$higher, and IQE droop is $\sim <\#comment/>12.4\mathrm{\%<\#comment/>}$, which is $\sim <\#comment/>333\mathrm{\%<\#comment/>}$less compared to the conventional AlGaN EBL LED structure at $\sim <\#comment/>284.5\mathrm{n}\mathrm{m}$wavelength. Hence, the proposed EBL-free AlGaN LED is the potential solution to enhance the optical power and produce highly efficient UV emitters. 

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5. Single-shot ultrafast visualization and measurement of laser–matter interactions in flexible glass using frequency domain holography

   https://doi.org/10.1364/OL.382645  

   Dempsey, Dennis; Nagar, Garima_C; Renskers, Christopher_K; Grynko, Rostislav_I; Sutherland, James_S; Shim, Bonggu (February 2020, Optics Letters)

   We perform single-shot frequency domain holography to measure the ultrafast spatio-temporal phase change induced by the optical Kerr effect and plasma in flexible Corning Willow Glass during femtosecond laser–matter interactions. We measure the nonlinear index of refraction ( $n_2$) to be $(3.6\pm <\#comment/>0.1)\times <\#comment/>{10}^{-<\#comment/>16}{\mathrm{c}\mathrm{m}}^2/\mathrm{W}$and visualize the plasma formation and recombination on femtosecond time scales in a single shot. To compare with the experiment, we carry out numerical simulations by solving the nonlinear envelope equation. 

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