More Like this

1. Electron-Induced Reactions of Ru(CO) ₄ I ₂ : Gas Phase, Surface, and Electron Beam-Induced Deposition

   https://doi.org/10.1021/acs.jpcc.0c01801  

   Thorman, Rachel M.; Jensen, Pernille A.; Yu, Jo-Chi; Matsuda, Scott J.; McElwee-White, Lisa; Ingólfsson, Oddur; Fairbrother, D. Howard (May 2020, The Journal of Physical Chemistry C)
2. Tuning the Surface Electron Accumulation Layer of In ₂ O ₃ by Adsorption of Molecular Electron Donors and Acceptors

   https://doi.org/10.1002/smll.202300730  

   Wang, Rongbin; Schultz, Thorsten; Papadogianni, Alexandra; Longhi, Elena; Gatsios, Christos; Zu, Fengshuo; Zhai, Tianshu; Barlow, Stephen; Marder, Seth R.; Bierwagen, Oliver; et al (April 2023, Small)

   Abstract In₂O₃, an n‐type semiconducting transparent transition metal oxide, possesses a surface electron accumulation layer (SEAL) resulting from downward surface band bending due to the presence of ubiquitous oxygen vacancies. Upon annealing In₂O₃in ultrahigh vacuum or in the presence of oxygen, the SEAL can be enhanced or depleted, as governed by the resulting density of oxygen vacancies at the surface. In this work, an alternative route to tune the SEAL by adsorption of strong molecular electron donors (specifically here ruthenium pentamethylcyclopentadienyl mesitylene dimer, [RuCp*mes]₂) and acceptors (here 2,2′‐(1,3,4,5,7,8‐hexafluoro‐2,6‐naphthalene‐diylidene)bis‐propanedinitrile, F₆TCNNQ) is demonstrated. Starting from an electron‐depleted In₂O₃surface after annealing in oxygen, the deposition of [RuCp*mes]₂restores the accumulation layer as a result of electron transfer from the donor molecules to In₂O₃, as evidenced by the observation of (partially) filled conduction sub‐bands near the Fermi level via angle‐resolved photoemission spectroscopy, indicating the formation of a 2D electron gas due to the SEAL. In contrast, when F₆TCNNQ is deposited on a surface annealed without oxygen, the electron accumulation layer vanishes and an upward band bending is generated at the In₂O₃surface due to electron depletion by the acceptor molecules. Hence, further opportunities to expand the application of In₂O₃in electronic devices are revealed. 

   more » « less
3. Theoretical study of vibrational excitation and dissociative electron attachment of NO ₂ by an electron impact

   https://doi.org/10.1088/1742-6596/1412/17/172002  

   Liu, H; Santos, S F; Yuen, C; Cortona, P; Kokoouline, V; Ayouz, M (January 2020, Journal of Physics: Conference Series)
4. Electron Spin Resonance Properties of CrI ₃ and CrCl ₃ Single Crystals

   https://doi.org/10.1557/adv.2019.241  

   Saiz, C. L.; McGuire, M. A.; Hennadige, S. R.; van Tol, J.; Singamaneni, S. R. (May 2019, MRS Advances)

   Developing functional, cleavable two-dimensional materials for use in next generation devices has recently become a topic of considerable interest due to their unique properties. Of particular interest, transition metal halides CrI3 and CrCl3 have shown to be good contenders for tunable and cleavable magnetic materials due to their unique magnetic properties in the monolayer. 

   more » « less
5. Cross Sections for Electron Collisions with NO, N ₂ O, and NO ₂

   https://doi.org/10.1063/1.5114722  

   Song, Mi-Young; Yoon, Jung-Sik; Cho, Hyuck; Karwasz, Grzegorz P.; Kokoouline, Viatcheslav; Nakamura, Yoshiharu; Tennyson, Jonathan (December 2019, Journal of Physical and Chemical Reference Data)