Abstract We explore the possibility to use advanced germanium (Ge) detectors as a low-energy solar neutrino observatory by means of neutrino-nucleus elastic scattering. A Ge detector utilizing internal charge amplification for the charge carriers created by the ionization of impurities is a novel technology with experimental sensitivity for detecting low-energy solar neutrinos. Ge internal charge amplification (GeICA) detectors will amplify the charge carriers induced by neutrino interacting with Ge atoms through the emission of phonons. It is those phonons that will create charge carriers through the ionization of impurities to achieve an extremely low energy threshold of ∼0.01 eV. We demonstrate the phonon absorption, excitation, and ionization probability of impurities in a Ge detector with impurity levels of 3 × 10 10 cm −3 , 9 × 10 10 cm −3 , and 2 × 10 11 cm −3 . We present the sensitivity of such a Ge experiment for detecting solar neutrinos in the low-energy region. We show that, if GeICA technology becomes available, then a new opportunity arises to observe pp and 7 Be solar neutrinos. Such a novel detector with only 1 kg of high-purity Ge will give ∼10 events per year for pp neutrinos and ∼5 events per year for 7 Be neutrinos with a detection energy threshold of 0.01 eV.
more »
« less
Investigation of the electrical conduction mechanisms in P-type amorphous germanium electrical contacts for germanium detectors in searching for rare-event physics
Abstract For the first time, electrical conduction mechanisms in the disordered material system is experimentally studied for p-type amorphous germanium (a-Ge) used for high-purity Ge detector contacts. The localization length and the hopping parameters in a-Ge are determined using the surface leakage current measured from three high-purity planar Ge detectors. The temperature dependent hopping distance and hopping energy are obtained for a-Ge fabricated as the electrical contact materials for high-purity Ge planar detectors. As a result, we find that the hopping energy in a-Ge increases as temperature increases while the hopping distance in a-Ge decreases as temperature increases. The localization length of a-Ge is on the order of $$2.13^{-0.05}_{+0.07}\mathrm{{A}}^\circ $$ 2 . 13 + 0.07 - 0.05 A ∘ to $$5.07^{-0.83}_{+2.58}\mathrm{{A}}^\circ $$ 5 . 07 + 2.58 - 0.83 A ∘ , depending on the density of states near the Fermi energy level within bandgap. Using these parameters, we predict that the surface leakage current from a Ge detector with a-Ge contacts can be much smaller than one yocto amp (yA) at helium temperature, suitable for rare-event physics searches.
more »
« less
- Award ID(s):
- 1743790
- NSF-PAR ID:
- 10281709
- Date Published:
- Journal Name:
- The European Physical Journal C
- Volume:
- 80
- Issue:
- 10
- ISSN:
- 1434-6044
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
More Like this
-
-
Abstract The detection of low-energy deposition in the range of sub-eV through ionization using germanium (Ge) with a bandgap of $$\sim $$ ∼ 0.7 eV requires internal amplification of the charge signal. This can be achieved through high electric field that accelerates charge carriers, which can then generate more charge carriers. The minimum electric field required to generate internal charge amplification is derived for different temperatures. We report the development of a planar point contact Ge detector in terms of its fabrication and the measurements of its leakage current and capacitance as a function of applied bias voltage. With the determination of the measured depletion voltage, the field distribution is calculated using GeFiCa, which predicts that the required electric field for internal charge amplification can be achieved in proximity to the point contact. The energy response to an Am-241 source is characterized and discussed. We conclude that such a detector with internal charge amplification can be used to search for low-mass dark matter.more » « less
-
Charge trapping degrades the energy resolution of germanium (Ge) detectors, which require to have increased experimental sensitivity in searching for dark matter and neutrinoless double-beta decay. We investigate the charge trapping processes utilizing nine planar detectors fabricated from USD-grown crystals with well-known net impurity levels. The charge collection efficiency as a function of charge trapping length is derived from the Shockley-Ramo theorem. Furthermore, we develop a model that correlates the energy resolution with the charge collection efficiency. This model is then applied to the experimental data. As a result, charge collection efficiency and charge trapping length are determined accordingly. Utilizing the Lax model (further developed by CDMS collaborators), the absolute impurity levels are determined for nine detectors. The knowledge of these parameters when combined with other traits such as the Fano factor serve as a reliable indicator of the intrinsic nature of charge trapping within the crystals. We demonstrate that electron trapping is more severe than hole trapping in a p-type detector and the charge collection efficiency depends on the absolute impurity level of the Ge crystal when an adequate bias voltage is applied to the detector. Negligible charge trapping is found when the absolute impurity level is less than 1.0$\times$10$^11/3$ for collecting electrons and 2.0$\times$10$^11/3$ for collecting holes.more » « less
-
more » « less
Abstract The strong and counterproductive interrelationship of thermoelectric parameters remains a bottleneck to improving thermoelectric performance, especially in polymer‐based materials. In this paper, a compositional range is investigated over which there is decoupling of the electrical conductivity and Seebeck coefficient, achieving increases in at least one of these two parameters while the other is maintained or slightly increased as well. This is done using an alkylthio‐substituted polythiophene (PQTS12) as additive in poly(bisdodecylquaterthiophene) (PQT12) with tetrafluorotetracyanoquinodimethane (F4TCNQ) and nitrosyl tetrafluoroborate (NOBF4) as dopants. The power factor increases two orders of magnitude with the PQTS12 additive at constant doping level. Using a second pair of polymers, poly(2,5‐bis(3‐dodecylthiophen‐2‐yl)thieno[3,2‐b]thiophene (PBTTTC12) and poly(2,5‐bis(3‐dodecylthiothiophen‐2‐yl)thieno[3,2‐b]thiophene, (PBTTTSC12), with higher mobilities, decoupling of the Seebeck coefficient and electrical conductivity is also observed and higher power factor is achieved. Distinguished from recently reported works, these two sets of polymers possess very closely offset carrier energy levels (0.05–0.07 eV), and the microstructure, assessed using grazing incidence X‐ray scattering, and mobility evaluated in field‐effect transistors, are not adversely affected by the blending. Experiments, calculations, and simulations are consistent with the idea that blending and doping polymers with closely spaced energy levels and compatible morphologies to promote carrier mobility favors increased power factors.
-
Cadmium zinc telluride selenide (CdZnTeSe) has shown great promise in reducing the cost of semiconductor nuclear detectors that can operate at room temperature without cryogenic cooling. This is due to the high yield of detector-grade materials in the CdZnTeSe crystal growth process, which can be attributed to the much smaller numbers of Te inclusions and grain boundary network in CdZnTeSe compared to other CdTe-based semiconductors such as CdZnTe. In the present work, we study the effects of surface passivation on CdZnTe detectors using a mixture of ammonium fluoride and hydrogen peroxide solution (NH4F + H2O2 + H2O). Detectors fabricated from CdZnTeSe crystals showed very good energy resolutions: 1.1% for the 662-keV gamma peak of Cs-137 by Frisch-grid detectors, and 5.9% for the 59.6-keV gamma peak of Am-241 by planar detectors. Experimental results show that the leakage current is increased immediately after passivation and then decreases as the surfaces stabilizes. The resistivity of the CdZnTeSe is of the order of 10**10 Ω-cm. The surface passivation improved the energy resolution of planar detector by 18% for the 59.6-keV gamma peak of Am-241.more » « less
- Free Publicly Accessible Full Text
-
Accepted Manuscript1.0
- Journal Article:
- https://doi.org/10.1140/epjc/s10052-020-08529-z
