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1. Low-energy solar neutrino detection utilizing advanced germanium detectors

   https://doi.org/10.1088/1361-6471/acc751  

   Bhattarai, S; Mei, D-M; Raut, M S (April 2023, Journal of Physics G: Nuclear and Particle Physics)

   Abstract We explore the possibility to use advanced germanium (Ge) detectors as a low-energy solar neutrino observatory by means of neutrino-nucleus elastic scattering. A Ge detector utilizing internal charge amplification for the charge carriers created by the ionization of impurities is a novel technology with experimental sensitivity for detecting low-energy solar neutrinos. Ge internal charge amplification (GeICA) detectors will amplify the charge carriers induced by neutrino interacting with Ge atoms through the emission of phonons. It is those phonons that will create charge carriers through the ionization of impurities to achieve an extremely low energy threshold of ∼0.01 eV. We demonstrate the phonon absorption, excitation, and ionization probability of impurities in a Ge detector with impurity levels of 3 × 10 10 cm −3 , 9 × 10 10 cm −3 , and 2 × 10 11 cm −3 . We present the sensitivity of such a Ge experiment for detecting solar neutrinos in the low-energy region. We show that, if GeICA technology becomes available, then a new opportunity arises to observe pp and 7 Be solar neutrinos. Such a novel detector with only 1 kg of high-purity Ge will give ∼10 events per year for pp neutrinos and ∼5 events per year for 7 Be neutrinos with a detection energy threshold of 0.01 eV. 

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2. Observation of time-dependent internal charge amplification in a planar germanium detector at cryogenic temperature

   https://doi.org/10.1140/epjc/s10052-023-11432-y  

   Acharya, P.; Fritts, M.; Mei, D. -M.; Mandic, V.; Wang, C. -J.; Mahapatra, R.; Platt, M. (April 2023, The European Physical Journal C)

   Abstract For the first time, time-dependent internal charge amplification through impact ionization has been observed in a planar germanium (Ge) detector operated at cryogenic temperature. In a time period of 30 and 45 min after applying a bias voltage, the charge energy corresponding to a baseline of the 59.54 keV$$\gamma $$ $\gamma$rays from a$$^{241}$$ ${}^{241}$Am source is amplified for a short period of time and then decreases back to the baseline. The amplification of charge energy depends strongly on the applied positive bias voltage with drifting holes across the detector. No such phenomenon is visible with drifting electrons across the detector. We find that the observed charge amplification is dictated by the impact ionization of charged states, which has a strong correlation with impurity level and applied electric field. We analyze the dominant physics mechanisms that are responsible for the creation and the impact ionization of charged states. Our analysis suggests that the appropriate level of impurity in a Ge detector can enhance charge yield through the impact ionization of charged states to achieve extremely low-energy detection threshold (< 10 meV) for MeV-scale dark matter searches if the charge amplification can be stabilized. 

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3. Exploring charge transport dynamics in a cryogenic P-type germanium detector

   https://doi.org/10.1088/1361-6471/ad60e6  

   Acharya, P.; Fritts, M.; Mei, D-M; Wang, G-J; Mahapatra, R.; Platt, M. (July 2024, Journal of Physics G: Nuclear and Particle Physics)

   Abstract This study explores the dynamics of charge transport within a cryogenic P-type Ge particle detector, fabricated from a crystal cultivated at the University of South Dakota. By subjecting the detector to cryogenic temperatures and an Am-241 source, we observe evolving charge dynamics and the emergence of cluster dipole states, leading to the impact ionization process at 40 mK. Our analysis focuses on crucial parameters: the zero-field cross-section of cluster dipole states and the binding energy of these states. For the Ge detector in our investigation, the zero-field cross-section of cluster dipole states is determined to be 8.45 × 10⁻¹¹± 4.22 × 10⁻¹²cm². Examination of the binding energy associated with cluster dipole states, formed by charge trapping onto dipole states during the freeze-out process, reveals a value of 0.034 ± 0.0017 meV. These findings shed light on the intricate charge states influenced by the interplay of temperature and electric field, with potential implications for the sensitivity in detecting low-mass dark matter. 

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4. Evidence of cluster dipole states in germanium detectors operating at temperatures below 10 K

   https://doi.org/10.1063/5.0094194  

   Mei, D-M; Panth, R.; Kooi, K.; Mei, H.; Bhattarai, S.; Raut, M.; Acharya, P.; Wang, G-J (June 2022, AIP Advances)

   By studying charge trapping in germanium detectors operating at temperatures below 10 K, we demonstrate for the first time that the formation of cluster dipole states from residual impurities is responsible for charge trapping. Two planar detectors with different impurity levels and types are used in this study. When drifting the localized charge carriers created by α particles from the top surface across a detector at a lower bias voltage, significant charge trapping is observed when compared to operating at a higher bias voltage. The amount of charge trapping shows a strong dependence on the type of charge carriers. Electrons are trapped more than holes in a p-type detector, while holes are trapped more than electrons in an n-type detector. When both electrons and holes are drifted simultaneously using the widespread charge carriers created by γ rays inside the detector, the amount of charge trapping shows no dependence on the polarity of bias voltage. 

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5. Impact of charge trapping on the energy resolution of Ge detectors for rare-event physics searches

   https://doi.org/10.1088/1361-6471/ab9796  

   Mei, Dongming; R Bharadwaj, Mukund; Wei, Wenzhao; Panth, Rajendra; Liu, Jing; Mei, Hao; Li, Yangyang; Acharya, Pramod; Bhattarai, Sanjay; Kooi, Kyler; et al (May 2020, Journal of Physics G: Nuclear and Particle Physics)

   Charge trapping degrades the energy resolution of germanium (Ge) detectors, which require to have increased experimental sensitivity in searching for dark matter and neutrinoless double-beta decay. We investigate the charge trapping processes utilizing nine planar detectors fabricated from USD-grown crystals with well-known net impurity levels. The charge collection efficiency as a function of charge trapping length is derived from the Shockley-Ramo theorem. Furthermore, we develop a model that correlates the energy resolution with the charge collection efficiency. This model is then applied to the experimental data. As a result, charge collection efficiency and charge trapping length are determined accordingly. Utilizing the Lax model (further developed by CDMS collaborators), the absolute impurity levels are determined for nine detectors. The knowledge of these parameters when combined with other traits such as the Fano factor serve as a reliable indicator of the intrinsic nature of charge trapping within the crystals. We demonstrate that electron trapping is more severe than hole trapping in a p-type detector and the charge collection efficiency depends on the absolute impurity level of the Ge crystal when an adequate bias voltage is applied to the detector. Negligible charge trapping is found when the absolute impurity level is less than 1.0$$\times$$10$^11/^3$ for collecting electrons and 2.0$$\times$$10$^11/^3$ for collecting holes. 

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