Colloidal semiconductor nanocrystals (NCs) have emerged as promising candidates for developing solutionprocessable optical gain media with potential applications in integrated photonic circuits and lasers. However, the deployment of NCs in these technologies has been hindered by the nonradiative Auger recombination of multiexciton states, which shortens the optical gain lifetime and reduces its spectral range. Here, we demonstrate that these limitations can be overcome by using giant colloidal quantum shells (g-QSs), comprising a quantum-confined CdSe shell grown over a large (∼14 nm) CdS bulk core. Such bulk-nanoscale architecture minimizes exciton− exciton interactions, leading to suppressed Auger recombination and one of the broadest gain bandwidths reported for colloidal nanomaterials, spanning energies both above and, remarkably, below the bandgap. Ultrafast transient absorption and photoluminescence measurements demonstrate that the high-energy portion of optical gain arises from states containing more than 15 excitons per particle, while the unusual sub-bandgap gain behavior results from an Auger-assisted radiative recombination, a mechanism that has traditionally been viewed as a loss pathway. Collectively, these results reveal a unique gain regime associated with bulk-nanocrystal hybrid systems, which offers a promising path toward solution-processable light sources.
more »
« less
Low-threshold laser medium utilizing semiconductor nanoshell quantum dots
Colloidal semiconductor nanocrystals (NCs) represent a promising class of nanomaterials for lasing applications. Currently, one of the key challenges facing the development of high-performance NC optical gain media lies in enhancing the lifetime of biexciton populations. This usually requires the employment of charge-delocalizing particle architectures, such as core/shell NCs, nanorods, and nanoplatelets. Here, we report on a two-dimensional nanoshell quantum dot (QD) morphology that enables a strong delocalization of photoinduced charges, leading to enhanced biexciton lifetimes and low lasing thresholds. A unique combination of a large exciton volume and a smoothed potential gradient across interfaces of the reported CdS bulk /CdSe/CdS shell (core/shell/shell) nanoshell QDs results in strong suppression of Auger processes, which was manifested in this work though the observation of stable amplified stimulated emission (ASE) at low pump fluences. An extensive charge delocalization in nanoshell QDs was confirmed by transient absorption measurements, showing that the presence of a bulk-size core in CdS bulk /CdSe/CdS shell QDs reduces exciton–exciton interactions. Overall, present findings demonstrate unique advantages of the nanoshell QD architecture as a promising optical gain medium in solid-state lighting and lasing applications.
more »
« less
- Award ID(s):
- 1710063
- PAR ID:
- 10283086
- Date Published:
- Journal Name:
- Nanoscale
- Volume:
- 12
- Issue:
- 33
- ISSN:
- 2040-3364
- Page Range / eLocation ID:
- 17426 to 17436
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
More Like this
-
-
We investigated the pressure-dependent exciton absorption and photoluminescence (PL) properties of colloidal InAs/ZnSe core/shell quantum dots (QDs) emitting near-infrared (NIR) photons, an environmentally friendly alternative to heavy-metal-containing NIR QDs. A detailed analysis of exciton absorption and emission spectra was conducted in the pressure range of 0–10 GPa, focusing on the energy shifts, PL intensity, and lineshape changes with pressure. The pressure coefficients for exciton absorption and PL peaks were ∼70% of the bulk InAs value, with enhanced bandgap nonlinearity tentatively attributed to the higher bulk modulus of QDs compared to bulk material. The pressure-induced shifts in exciton absorption and PL peaks were reversible upon compression and decompression, with no indication of the semiconductor-to-metallic phase transition observed in bulk InAs around 7 GPa. However, PL intensity exhibited partial irreversibility, suggesting defect formation at the core/shell interface under pressure. From the findings of this study, along with previous high-pressure studies on molecular beam epitaxy-grown InAs QDs on GaAs, we infer the importance of the shell in determining the pressure response of exciton absorption and PL in core/shell QD structures with non-negligible interfacial strain and wave function spill into the shell.more » « less
-
We report modulation of exciton dissociation dynamics in quantum dots (QD) connected with photochromic molecules. Our results show that switching the configuration of photochromic molecules changes the inter-QD potential barrier height which has a major impact on the charge tunnelling and exciton dissociation. The switching of the dominant exciton decay pathway between the radiative recombination and exciton dissociation results in switchable photoluminescence intensity from QDs. Implications of our findings for optical memory and optical computing applications are discussed.more » « less
-
Cadmium chalcogenide nanoplatelets (NPLs) and their heterostructures have been reported to have low gain thresholds and large gain coefficients, showing great potential for lasing applications. However, the further improvement of the optical gain properties of NPLs is hindered by a lack of models that can account for their optical gain characteristics and predict their dependence on the properties (such as lateral size, concentration, and/or optical density). Herein, we report a systematic study of optical gain (OG) in 4-monolayer thick CdSe NPLs by both transient absorption spectroscopy study of colloidal solutions and amplified spontaneous emission (ASE) measurement of thin films. We showed that comparing samples with the same optical density at the excitation, the OG threshold is not dependent of the NPL lateral area, while the saturation gain amplitude is dependent on the NPL lateral area when comparing samples with the same optical density at the excitation wavelength. Both the OG and ASE thresholds increase with the optical density at the excitation wavelength for samples of the same NPL thickness and lateral area. We proposed an OG model for NPLs that can successfully account for the observed lateral area and optical density dependences. The model reveals that OG originates from stimulated emission from the bi-exciton states and the OG threshold is reached when the average number of excitons per NPL is about half the occupation of the band-edge exciton states. The model can also rationalize the much lower OG thresholds in the NPLs compared to QDs. This work provides a microscopic understanding of the dependence of the OG properties on the morphology of the colloidal nanocrystals and important guidance for the rational optimization of the lasing performance of NPLs and other 1- and 2-dimensional nanocrystals.more » « less
-
Fulop, Gabor F.; Kimata, Masafumi; Zheng, Lucy; Andresen, Bjørn F.; Miller, John Lester (Ed.)Colloidal semiconductor quantum dots/graphene van der Waals (vdW) heterojunctions take advantages of the enhanced light-matter interaction and spectral tenability of quantum dots (QDs) and superior charge mobility in graphene, providing a promising alternative for uncooled infrared photodetectors with a gain or external quantum efficiency up to 1010. In these QD/graphene vdW heterostructures, the QD/graphene interface plays a critical role in controlling the optoelectronic process including exciton dissociation, charge injection and transport. Specifically, charge traps at the vdW interface can increase the noise, reduce the responsivity and response speed. This paper highlight our recent progress in engineering the vdW heterojunction interface towards more efficient charge transfer for higher photoresponsivity, D* and response speed. These results illustrate that the importance in vdW heterojunction interface engineering in QD/graphene photodetectors which may provide a promising pathway for low-cost, printable and flexible infrared detectors and imaging systems.more » « less
An official website of the United States government

