Saha, A. K., Si, M., Ni, K., Datta, S., Ye, P. D., and Gupta, S. K. Ferroelectric Thickness Dependent Domain Interactions in FEFETs for Memory and Logic: A Phase-field Model based Analysis. Retrieved from https://par.nsf.gov/biblio/10285987. International Electron Device Meetings (IEDM) . Web. doi:10.1109/IEDM13553.2020.9372099.

Saha, A. K., Si, M., Ni, K., Datta, S., Ye, P. D., & Gupta, S. K. Ferroelectric Thickness Dependent Domain Interactions in FEFETs for Memory and Logic: A Phase-field Model based Analysis. International Electron Device Meetings (IEDM), (). Retrieved from https://par.nsf.gov/biblio/10285987. https://doi.org/10.1109/IEDM13553.2020.9372099

Saha, A. K., Si, M., Ni, K., Datta, S., Ye, P. D., and Gupta, S. K. "Ferroelectric Thickness Dependent Domain Interactions in FEFETs for Memory and Logic: A Phase-field Model based Analysis". International Electron Device Meetings (IEDM) (). Country unknown/Code not available. https://doi.org/10.1109/IEDM13553.2020.9372099. https://par.nsf.gov/biblio/10285987.

@article{osti_10285987,
place = {Country unknown/Code not available}, title = {Ferroelectric Thickness Dependent Domain Interactions in FEFETs for Memory and Logic: A Phase-field Model based Analysis}, url = {https://par.nsf.gov/biblio/10285987}, DOI = {10.1109/IEDM13553.2020.9372099}, abstractNote = {}, journal = {International Electron Device Meetings (IEDM)}, author = {Saha, A. K. and Si, M. and Ni, K. and Datta, S. and Ye, P. D. and Gupta, S. K.}, editor = {null} }