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Title: Ferroelectric Thickness Dependent Domain Interactions in FEFETs for Memory and Logic: A Phase-field Model based Analysis
Authors:
; ; ; ; ;
Award ID(s):
2008412 1814756
Publication Date:
NSF-PAR ID:
10285987
Journal Name:
International Electron Device Meetings (IEDM)
Page Range or eLocation-ID:
4.3.1 to 4.3.4
Sponsoring Org:
National Science Foundation
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