- Award ID(s):
- 1643312
- Publication Date:
- NSF-PAR ID:
- 10288459
- Journal Name:
- Proceedings of the National Academy of Sciences
- Volume:
- 118
- Issue:
- 30
- Page Range or eLocation-ID:
- e2100006118
- ISSN:
- 0027-8424
- Sponsoring Org:
- National Science Foundation
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Abstract Moiré superlattices engineer band properties and enable observation of fractal energy spectra of Hofstadter butterfly. Recently, correlated-electron physics hosted by flat bands in small-angle moiré systems has been at the foreground. However, the implications of moiré band topology within the single-particle framework are little explored experimentally. An outstanding problem is understanding the effect of band topology on Hofstadter physics, which does not require electron correlations. Our work experimentally studies Chern state switching in the Hofstadter regime using twisted double bilayer graphene (TDBG), which offers electric field tunable topological bands, unlike twisted bilayer graphene. Here we show that the nontrivial topology reflects in the Hofstadter spectra, in particular, by displaying a cascade of Hofstadter gaps that switch their Chern numbers sequentially while varying the perpendicular electric field. Our experiments together with theoretical calculations suggest a crucial role of charge polarization changing concomitantly with topological transitions in this system. Layer polarization is likely to play an important role in the topological states in few-layer twisted systems. Moreover, our work establishes TDBG as a novel Hofstadter platform with nontrivial magnetoelectric coupling.
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Engineering moiré superlattices by twisting layers in van der Waals (vdW) heterostructures has uncovered a wide array of quantum phenomena. We constructed a vdW heterostructure that consists of three graphene layers stacked with alternating twist angles ±θ. At the average twist angle θ ~ 1.56°, a theoretically predicted “magic angle” for the formation of flat electron bands, we observed displacement field–tunable superconductivity with a maximum critical temperature of 2.1 kelvin. By tuning the doping level and displacement field, we found that superconducting regimes occur in conjunction with flavor polarization of moiré bands and are bounded by a van Hove singularity (vHS) at high displacement fields. Our findings display inconsistencies with a weak coupling description, suggesting that the observed moiré superconductivity has an unconventional nature.
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Tuning interactions between Dirac states in graphene has attracted enormous interest because it can modify the electronic spectrum of the two-dimensional material, enhance electron correlations, and give rise to novel condensed-matter phases such as superconductors, Mott insulators, Wigner crystals and quantum anomalous Hall insulators. Previous works predominantly focus on the flat band dispersion of coupled Dirac states from different twisted graphene layers. In this work, we propose a new route to realizing flat band physics in monolayer graphene under a periodic modulation from substrates. We take graphene/SiC heterostructure as a prototypical example and demonstrate experimentally that the substrate modulation leads to Dirac fermion cloning and consequently, the proximity of the two Dirac cones of monolayer graphene in momentum space. Our theoretical modeling captures the cloning mechanism of Dirac states and indicates that Moiré flat bands can emerge at certain magic lattice constants of the substrate, specifically when the period of modulation becomes nearly commensurate with the (√3×√3)𝑅30∘ supercell of graphene. The results show that epitaxial single monolayer graphene on suitable substrates is a promising platform for exploring exotic many-body quantum phases arising from interactions between Dirac electrons.
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Abstract Fractional Chern insulators (FCIs) are lattice analogues of fractional quantum Hall states that may provide a new avenue towards manipulating non-Abelian excitations. Early theoretical studies 1–7 have predicted their existence in systems with flat Chern bands and highlighted the critical role of a particular quantum geometry. However, FCI states have been observed only in Bernal-stacked bilayer graphene (BLG) aligned with hexagonal boron nitride (hBN) 8 , in which a very large magnetic field is responsible for the existence of the Chern bands, precluding the realization of FCIs at zero field. By contrast, magic-angle twisted BLG 9–12 supports flat Chern bands at zero magnetic field 13–17 , and therefore offers a promising route towards stabilizing zero-field FCIs. Here we report the observation of eight FCI states at low magnetic field in magic-angle twisted BLG enabled by high-resolution local compressibility measurements. The first of these states emerge at 5 T, and their appearance is accompanied by the simultaneous disappearance of nearby topologically trivial charge density wave states. We demonstrate that, unlike the case of the BLG/hBN platform, the principal role of the weak magnetic field is merely to redistribute the Berry curvature of the native Chern bands and thereby realize a quantum geometry favourablemore »
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Abstract Moiré superlattices created by the twisted stacking of two-dimensional crystals can host electronic bands with flat energy dispersion in which enhanced interactions promote correlated electron states. The twisted double bilayer graphene (TDBG), where two Bernal bilayer graphene are stacked with a twist angle, is such a moiré system with tunable flat bands. Here, we use gate-tuned scanning tunneling spectroscopy to directly demonstrate the tunability of the band structure of TDBG with an electric field and to show spectroscopic signatures of electronic correlations and topology for its flat band. Our spectroscopic experiments are in agreement with a continuum model of TDBG band structure and reveal signatures of a correlated insulator gap at partial filling of its isolated flat band. The topological properties of this flat band are probed with the application of a magnetic field, which leads to valley polarization and the splitting of Chern bands with a large effective g-factor.