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  • Twisted symmetric trilayer graphene: Single-particle and many-body Hamiltonians and hidden nonlocal symmetries of trilayer moiré systems with and without displacement field
Title: Twisted symmetric trilayer graphene: Single-particle and many-body Hamiltonians and hidden nonlocal symmetries of trilayer moiré systems with and without displacement field
Award ID(s):
1643312 2011750
PAR ID:
10288461
Author(s) / Creator(s):
; ; ; ; ;
Date Published:
Journal Name:
Physical Review B
Volume:
103
Issue:
19
ISSN:
2469-9950
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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    Graphene-based nanodevices have been developed rapidly and are now considered a strong contender for postsilicon electronics. However, one challenge facing graphene-based transistors is opening a sizable bandgap in graphene. The largest bandgap achieved so far is several hundred meV in bilayer graphene, but this value is still far below the threshold for practical applications. Through in situ electrical measurements, we observed a semiconducting character in compressed trilayer graphene by tuning the interlayer interaction with pressure. The optical absorption measurements demonstrate that an intrinsic bandgap of 2.5 ± 0.3 eV could be achieved in such a semiconducting state, and once opened could be preserved to a few GPa. The realization of wide bandgap in compressed trilayer graphene offers opportunities in carbon-based electronic devices. 
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    Transition metal dichalcogenide heterostructures show strong interactions and can imprint a moiré potential to a separate layer. 
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