Previous high-resolution angle-resolved photoemission (ARPES) studies of URu2Si2have characterized the temperature-dependent behavior of narrow-band states close to the Fermi level (
- Award ID(s):
- 1810310
- Publication Date:
- NSF-PAR ID:
- 10288884
- Journal Name:
- Proceedings of the National Academy of Sciences
- Volume:
- 118
- Issue:
- 27
- Page Range or eLocation-ID:
- e2020750118
- ISSN:
- 0027-8424
- Sponsoring Org:
- National Science Foundation
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Global perspectives of the bulk electronic structure of URu 2 Si 2 from angle-resolved photoemission
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Electrical resistivity measurements were performed on single crystals of URu2–
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