Growden, Tyler A., Storm, David F., Cornuelle, Evan M., Brown, Elliott R., Zhang, Weidong, Downey, Brian P., Roussos, Jason A, Cronk, Nicholas, Ruppalt, Laura B., Champlain, James G., Berger, Paul R., and Meyer, David J. Superior growth, yield, repeatability, and switching performance in GaN-based resonant tunneling diodes. Retrieved from https://par.nsf.gov/biblio/10289114. Applied Physics Letters 116.11 Web. doi:10.1063/1.5139219.

Growden, Tyler A., Storm, David F., Cornuelle, Evan M., Brown, Elliott R., Zhang, Weidong, Downey, Brian P., Roussos, Jason A, Cronk, Nicholas, Ruppalt, Laura B., Champlain, James G., Berger, Paul R., & Meyer, David J. Superior growth, yield, repeatability, and switching performance in GaN-based resonant tunneling diodes. Applied Physics Letters, 116 (11). Retrieved from https://par.nsf.gov/biblio/10289114. https://doi.org/10.1063/1.5139219

Growden, Tyler A., Storm, David F., Cornuelle, Evan M., Brown, Elliott R., Zhang, Weidong, Downey, Brian P., Roussos, Jason A, Cronk, Nicholas, Ruppalt, Laura B., Champlain, James G., Berger, Paul R., and Meyer, David J. "Superior growth, yield, repeatability, and switching performance in GaN-based resonant tunneling diodes". Applied Physics Letters 116 (11). Country unknown/Code not available. https://doi.org/10.1063/1.5139219. https://par.nsf.gov/biblio/10289114.

@article{osti_10289114,
place = {Country unknown/Code not available}, title = {Superior growth, yield, repeatability, and switching performance in GaN-based resonant tunneling diodes}, url = {https://par.nsf.gov/biblio/10289114}, DOI = {10.1063/1.5139219}, abstractNote = {}, journal = {Applied Physics Letters}, volume = {116}, number = {11}, author = {Growden, Tyler A. and Storm, David F. and Cornuelle, Evan M. and Brown, Elliott R. and Zhang, Weidong and Downey, Brian P. and Roussos, Jason A and Cronk, Nicholas and Ruppalt, Laura B. and Champlain, James G. and Berger, Paul R. and Meyer, David J.}, editor = {null} }