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Title: Superior growth, yield, repeatability, and switching performance in GaN-based resonant tunneling diodes
Authors:
; ; ; ; ; ; ; ; ; ; ;
Award ID(s):
1711738
Publication Date:
NSF-PAR ID:
10289114
Journal Name:
Applied Physics Letters
Volume:
116
Issue:
11
Page Range or eLocation-ID:
113501
ISSN:
0003-6951
Sponsoring Org:
National Science Foundation
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