Carrier Density-Tunable Work Function Buffer at the Channel/Metallization Interface for Amorphous Oxide Thin-Film Transistors
- Award ID(s):
- 1931088
- PAR ID:
- 10289747
- Date Published:
- Journal Name:
- ACS Applied Electronic Materials
- Volume:
- 3
- Issue:
- 6
- ISSN:
- 2637-6113
- Page Range / eLocation ID:
- 2703 to 2711
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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