Liu, Mingyuan, Kim, Hyeonghun, Wang, Xingyu, Song, Han Wook, No, Kwangsoo, and Lee, Sunghwan. Carrier Density-Tunable Work Function Buffer at the Channel/Metallization Interface for Amorphous Oxide Thin-Film Transistors. Retrieved from https://par.nsf.gov/biblio/10289747. ACS Applied Electronic Materials 3.6 Web. doi:10.1021/acsaelm.1c00284.

Liu, Mingyuan, Kim, Hyeonghun, Wang, Xingyu, Song, Han Wook, No, Kwangsoo, & Lee, Sunghwan. Carrier Density-Tunable Work Function Buffer at the Channel/Metallization Interface for Amorphous Oxide Thin-Film Transistors. ACS Applied Electronic Materials, 3 (6). Retrieved from https://par.nsf.gov/biblio/10289747. https://doi.org/10.1021/acsaelm.1c00284

Liu, Mingyuan, Kim, Hyeonghun, Wang, Xingyu, Song, Han Wook, No, Kwangsoo, and Lee, Sunghwan. "Carrier Density-Tunable Work Function Buffer at the Channel/Metallization Interface for Amorphous Oxide Thin-Film Transistors". ACS Applied Electronic Materials 3 (6). Country unknown/Code not available. https://doi.org/10.1021/acsaelm.1c00284. https://par.nsf.gov/biblio/10289747.

@article{osti_10289747,
place = {Country unknown/Code not available}, title = {Carrier Density-Tunable Work Function Buffer at the Channel/Metallization Interface for Amorphous Oxide Thin-Film Transistors}, url = {https://par.nsf.gov/biblio/10289747}, DOI = {10.1021/acsaelm.1c00284}, abstractNote = {}, journal = {ACS Applied Electronic Materials}, volume = {3}, number = {6}, author = {Liu, Mingyuan and Kim, Hyeonghun and Wang, Xingyu and Song, Han Wook and No, Kwangsoo and Lee, Sunghwan}, editor = {null} }