Kim, Myungsoo, Pallecchi, Emiliano, Ge, Ruijing, Wu, Xiaohan, Ducournau, Guillaume, Lee, Jack C., Happy, Henri, and Akinwande, Deji. Analogue switches made from boron nitride monolayers for application in 5G and terahertz communication systems. Retrieved from https://par.nsf.gov/biblio/10291335. Nature Electronics 3.8 Web. doi:10.1038/s41928-020-0416-x.

Kim, Myungsoo, Pallecchi, Emiliano, Ge, Ruijing, Wu, Xiaohan, Ducournau, Guillaume, Lee, Jack C., Happy, Henri, & Akinwande, Deji. Analogue switches made from boron nitride monolayers for application in 5G and terahertz communication systems. Nature Electronics, 3 (8). Retrieved from https://par.nsf.gov/biblio/10291335. https://doi.org/10.1038/s41928-020-0416-x

Kim, Myungsoo, Pallecchi, Emiliano, Ge, Ruijing, Wu, Xiaohan, Ducournau, Guillaume, Lee, Jack C., Happy, Henri, and Akinwande, Deji. "Analogue switches made from boron nitride monolayers for application in 5G and terahertz communication systems". Nature Electronics 3 (8). Country unknown/Code not available. https://doi.org/10.1038/s41928-020-0416-x. https://par.nsf.gov/biblio/10291335.

@article{osti_10291335,
place = {Country unknown/Code not available}, title = {Analogue switches made from boron nitride monolayers for application in 5G and terahertz communication systems}, url = {https://par.nsf.gov/biblio/10291335}, DOI = {10.1038/s41928-020-0416-x}, abstractNote = {}, journal = {Nature Electronics}, volume = {3}, number = {8}, author = {Kim, Myungsoo and Pallecchi, Emiliano and Ge, Ruijing and Wu, Xiaohan and Ducournau, Guillaume and Lee, Jack C. and Happy, Henri and Akinwande, Deji}, editor = {null} }