Khachariya, Dolar, Szymanski, Dennis, Breckenridge, M. Hayden, Reddy, Pramod, Kohn, Erhard, Sitar, Zlatko, Collazo, Ramón, and Pavlidis, Spyridon. On the characteristics of N-polar GaN Schottky barrier contacts with LPCVD SiN interlayers. Retrieved from https://par.nsf.gov/biblio/10291979. Applied Physics Letters 118.12 Web. doi:10.1063/5.0039888.

Khachariya, Dolar, Szymanski, Dennis, Breckenridge, M. Hayden, Reddy, Pramod, Kohn, Erhard, Sitar, Zlatko, Collazo, Ramón, & Pavlidis, Spyridon. On the characteristics of N-polar GaN Schottky barrier contacts with LPCVD SiN interlayers. Applied Physics Letters, 118 (12). Retrieved from https://par.nsf.gov/biblio/10291979. https://doi.org/10.1063/5.0039888

Khachariya, Dolar, Szymanski, Dennis, Breckenridge, M. Hayden, Reddy, Pramod, Kohn, Erhard, Sitar, Zlatko, Collazo, Ramón, and Pavlidis, Spyridon. "On the characteristics of N-polar GaN Schottky barrier contacts with LPCVD SiN interlayers". Applied Physics Letters 118 (12). Country unknown/Code not available. https://doi.org/10.1063/5.0039888. https://par.nsf.gov/biblio/10291979.

@article{osti_10291979,
place = {Country unknown/Code not available}, title = {On the characteristics of N-polar GaN Schottky barrier contacts with LPCVD SiN interlayers}, url = {https://par.nsf.gov/biblio/10291979}, DOI = {10.1063/5.0039888}, abstractNote = {}, journal = {Applied Physics Letters}, volume = {118}, number = {12}, author = {Khachariya, Dolar and Szymanski, Dennis and Breckenridge, M. Hayden and Reddy, Pramod and Kohn, Erhard and Sitar, Zlatko and Collazo, Ramón and Pavlidis, Spyridon}, editor = {null} }