ABSTRACT Currently, the main material for the production of solar cells is still silicon. More than 70% of the global production of solar cells are silicon based. For solar-grade silicon production the technologies based on the reduction of silicon from organosilicon compounds are mainly used. These technologies are energy-consuming, highly explosive and unsustainable. The present paper studies the technology of purification of metallurgical-grade silicon by vacuum-thermal and plasma-chemical treatment of silicon melt under electromagnetic stirring using numerical simulation and compares this technology with the existing ones (silane technologies and Elkem Solar silicon (ESS) production process) in terms of energy consumption, environmental safety and the process scalability. It is shown that the proposed technology is environmentally safe, scalable and has low power consumption. The final product of this technology is multicrystalline silicon, ready for silicon wafer production.
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Efficient and selective alkene hydrosilation promoted by weak, double Si–H activation at an iron center
Cationic iron complexes [Cp*( i Pr 2 MeP)FeH 2 SiHR] + , generated and characterized in solution, are very efficient catalysts for the hydrosilation of terminal alkenes and internal alkynes by primary silanes at low catalyst loading (0.1 mol%) and ambient temperature. These reactions yield only the corresponding secondary silane product, even with SiH 4 as the substrate. Mechanistic experiments and DFT calculations indicate that the high rate of hydrosilation is associated with an inherently low barrier for dissociative silane exchange (product release).
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- Award ID(s):
- 1954808
- NSF-PAR ID:
- 10293653
- Date Published:
- Journal Name:
- Chemical Science
- Volume:
- 11
- Issue:
- 27
- ISSN:
- 2041-6520
- Page Range / eLocation ID:
- 7070 to 7075
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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ABSTRACT A sol–gel polymerization method was developed to make polyimide (PI) silsesquioxane (SSQ) nanoparticles as functional, soft dielectric materials. The surface functionalization of the polymer chain backbone and chain ends of poly(trimellitic anhydride chloride‐
co ‐4,4′‐methylenedianiline),PMR‐15 resin , withpara ‐(chloromethyl)‐phenylethyltrimethoxy silane yielded a novel sol–gel reactive sites functionalized PMR‐silane precursor. Upon base‐catalyzed hydrolysis and condensation of the PMR‐silane precursor, spherical, raspberry‐like PMR‐SSQ nanoparticles were obtained in considerably good yield. Controlling the particle size distribution was attempted upon adjusting the molar ratio between the silane precursor and the base, as well as in the presence of a catalytic amount of silica sols. Particle composition, thermal stability, and morphology were confirmed from Fourier transform infrared, thermogravimetric analysis, and scanning electron microscopy analyses. Nanoparticles, visualized under transmission electron microscopy exhibit a nanoporous structure. The Brunauer–Emmett–Teller analysis confirmed that the average pore dimension is ranged from 2 to 5 nm. The dielectric constant of PMR‐SSQ nanoparticles was as low as 1.95, compared to dielectric constants of 3.05 and 3.13 for PMR‐15 and PMR‐silane, respectively. Thus, the base‐catalyzed sol–gel polymerization of alkoxysilylated PI offers a novel synthetic path to make functional nanoporous PI nanostructures that possess ultralow dielectric constants. © 2018 Wiley Periodicals, Inc. J. Polym. Sci., Part A: Polym. Chem.2013 ,57 , 562–571. -
Teherani, Ferechteh H. ; Rogers, David J. (Ed.)We demonstrated a metal-organic chemical vapor deposition (MOCVD) of smooth, thick, and monoclinic phase-pure gallium oxide (Ga2O3) on c-plane sapphire using silicon-oxygen bonding (SiOx) as a phase stabilizer. The corundum (α), monoclinic (β), and orthorhombic (ε) phases of Ga2O3 with a bandgap in the 4.4 – 5.1 eV range, are promising materials for power semiconductor devices and deep ultraviolet (UV) solar-blind photodetectors. The MOCVD systems are extensively used for homoepitaxial growth of β-Ga2O3 on (001), (100), (010), and (¯2 01) β-Ga2O3 substrates. These substrates are rare/expensive and have very low thermal conductivity; thus, are not suitable for high-power semiconductor devices. The c-plane sapphire is typically used as a substrate for high-power devices. The β-Ga2O3 grows in the (¯2 01) direction on sapphire. In this direction, the presence of high-density oxygen dangling bonds, frequent stacking faults, twinning, and other phases and planes impede the heteroepitaxy of thick β-Ga2O3. Previously phase stabilizations with SiOx have been reported for tetragonal and monoclinic hafnia. We were able to grow ~580nm thick β-Ga2O3 on sapphire by MOCVD at 750 oC through phase stabilization using silane. The samples grown with silane have a reduction in the surface roughness and resistivity from 10.7 nm to 4.4 nm and from 371.75 Ω.cm to 135.64 Ω.cm, respectively. These samples show a pure-monoclinic phase determined by x-ray diffraction (XRD); have tensile strain determined by Raman strain mapping. These results show that a thick, phase-pure -Ga2O3 can be grown on c-plane sapphire which can be suitable for creating power devices with better thermal management.more » « less
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Metalorganic chemical vapor deposition (MOCVD) growths of β-Ga 2 O 3 on on-axis (100) Ga 2 O 3 substrates are comprehensively investigated. Key MOCVD growth parameters including growth temperature, pressure, group VI/III molar flow rate ratio, and carrier gas flow rate are mapped. The dependence of the growth conditions is correlated with surface morphology, growth rate, and electron transport properties of the MOCVD grown (100) β-Ga 2 O 3 thin films. Lower shroud gas (argon) flow is found to enhance the surface smoothness with higher room temperature (RT) electron Hall mobility. The growth rate of the films decreases but with an increase of electron mobility as the VI/III molar flow rate ratio increases. Although no significant variation on the surface morphologies is observed at different growth temperatures, the general trend of electron Hall mobilities are found to increase with increasing growth temperature. The growth rates reduce significantly with uniform surface morphologies as the chamber pressure increases. By tuning the silane flow rate, the controllable carrier concentration of (100) β-Ga 2 O 3 thin films between low-10 17 cm −3 and low-10 18 cm −3 was achieved. Under optimized growth condition, an (100) β-Ga 2 O 3 thin film with RMS roughness value of 1.64 nm and a RT mobility of 24 cm 2 /Vs at a carrier concentration of 7.0 × 10 17 cm −3 are demonstrated. The mobilities are primarily limited by the twin lamellae and stacking faults defects generated from the growth interface. Atomic resolution scanning transmission electron microscopy reveals the formation of twin boundary defects in the films, resulting in the degradation of crystalline quality. Results from this work provide fundamental understanding of the MOCVD epitaxy of (100) β-Ga 2 O 3 on on-axis Ga 2 O 3 substrates and the dependence of the material properties on growth conditions. The limitation of electron transport properties of the (100) β-Ga 2 O 3 thin films below 25 cm 2 /Vs is attributed to the formation of incoherent boundaries (twin lamellae) and stacking faults grown along the on-axis (100) crystal orientation.more » « less
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Investigations into the reactivity, properties, and applications of osmium(IV) tetraaryl complexes have been hampered by their low yielding syntheses from volatile and toxic OsO4 (typically ≤34%). Here we show that known air-stable M(aryl)4 compounds (M = Os, Ru; aryl = 2-tolyl, 2,5-xylyl) can be prepared in ≤73% yields using new, less hazardous (Oct4N)2[MX6] precursors (M = Os, Ru; X = Cl, Br). This approach also facilitates the preparation of Os(mesityl)4 (Os3) for the first time, a complex comprising bulky 2,6-dimethyl substituted aryl ligands, albeit in low yield (5%). To better understand these yield extremes, we track, by synthesizing two additional new complexes with different 2-substituted σ-aryl ligands, a clear relationship between the yields of Os(aryl)4 and ligand steric bulk. Single-crystal X-ray structures of these compounds indicate that the observed yield trend reflects the ease of accommodating aryl substituents into an open pocket that lies directly opposite each M-aryl coordination site. We perform variable-temperature 1H NMR studies of Os3, utilize a "tetrahedricity" metric to assess geometric distortion in Ru(aryl)4 and Os(aryl)4 materials, and calculate cone angle and percentage buried volume metrics to further illustrate and help quantify -aryl ligand steric properties. Solution cyclic voltammograms of Os(aryl)4 show that the potentials of their reversible 1−/0 and 0/1+ redox features can be fine-tuned by varying aryl substituents, and that Os3 exhibits an additional 1+/2+ redox event not previously observed in this class of compounds. Taken together, this work helps to advance the potential application of these relatively underexplored organometallic complexes in established and emerging areas of molecular materials science, such as extended molecular frameworks and self-assembled monolayers, where analogous tetraphenylmethane and silane species (M = C, Si) have been frequently targeted.more » « less
- Free Publicly Accessible Full Text
-
Accepted Manuscript1.0
- Journal Article:
- https://doi.org/10.1039/D0SC01749C
