Lee, Min-Han, Kalcheim, Yoav, Valle, Javier del, and Schuller, Ivan K. Controlling Metal–Insulator Transitions in Vanadium Oxide Thin Films by Modifying Oxygen Stoichiometry. Retrieved from https://par.nsf.gov/biblio/10298340. ACS Applied Materials & Interfaces 13.1 Web. doi:10.1021/acsami.0c18327.

Lee, Min-Han, Kalcheim, Yoav, Valle, Javier del, & Schuller, Ivan K. Controlling Metal–Insulator Transitions in Vanadium Oxide Thin Films by Modifying Oxygen Stoichiometry. ACS Applied Materials & Interfaces, 13 (1). Retrieved from https://par.nsf.gov/biblio/10298340. https://doi.org/10.1021/acsami.0c18327

Lee, Min-Han, Kalcheim, Yoav, Valle, Javier del, and Schuller, Ivan K. "Controlling Metal–Insulator Transitions in Vanadium Oxide Thin Films by Modifying Oxygen Stoichiometry". ACS Applied Materials & Interfaces 13 (1). Country unknown/Code not available. https://doi.org/10.1021/acsami.0c18327. https://par.nsf.gov/biblio/10298340.

@article{osti_10298340,
place = {Country unknown/Code not available}, title = {Controlling Metal–Insulator Transitions in Vanadium Oxide Thin Films by Modifying Oxygen Stoichiometry}, url = {https://par.nsf.gov/biblio/10298340}, DOI = {10.1021/acsami.0c18327}, abstractNote = {}, journal = {ACS Applied Materials & Interfaces}, volume = {13}, number = {1}, author = {Lee, Min-Han and Kalcheim, Yoav and Valle, Javier del and Schuller, Ivan K.}, editor = {null} }