Adsorption-controlled growth of Ga 2 O 3 by suboxide molecular-beam epitaxy
- Award ID(s):
- 1825538
- NSF-PAR ID:
- 10299695
- Date Published:
- Journal Name:
- APL Materials
- Volume:
- 9
- Issue:
- 3
- ISSN:
- 2166-532X
- Page Range / eLocation ID:
- 031101
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation