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Title: Adsorption-controlled growth of Ga 2 O 3 by suboxide molecular-beam epitaxy
Award ID(s):
1825538
NSF-PAR ID:
10299695
Author(s) / Creator(s):
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Date Published:
Journal Name:
APL Materials
Volume:
9
Issue:
3
ISSN:
2166-532X
Page Range / eLocation ID:
031101
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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