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1. Particle-in-Cell Simulation of Quasi-Neutral Plasma Trapping by RF Multipole Electric Fields

   https://doi.org/10.3390/physics1030028  

   Hicks, Nathaniel K. ; Bowman, Amanda ; Godden, Katarina ( December 2019 , Physics)

   Radio-frequency (RF) charged particle traps, such as the Paul trap or higher order RF multipole traps, may be used to trap quasi-neutral plasma. The presence of positive and negative plasma species mitigates the ejection of particles that occurs due to space charge repulsion. For symmetric species, such as a pair plasma, the trapped particle distribution is essentially equal for both species. For plasma with species of disparate charge-to-mass ratio, the RF parameters are chosen to directly trap the lighter species, leading to loss of the heavier species until sufficient net space charge develops to prevent further loss. Two-dimensional (2D) electrostatic particle-in-cell simulations are performed of cases with mass ratio m+/m− = 10, and also with ion–electron plasma. Multipole cases including order N = 2 (quadrupole) and higher order N = 8 (hexadecapole) are considered. The light ion-heavy ion N = 8 case exhibits particles losses less than 5% over 2500 RF periods, but the N = 8 ion–electron case exhibits a higher loss rate, likely due to non-adiabaticity of electron trajectories at the boundary, but still with low total electron loss current on the order of 10 μA. The N = 2 ion-electron case is adiabatic and stable, but is subject to a smaller trapping volume and greater initial perturbation of the bulk plasma by the trapping field. 

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2. Are the Gas-Phase Structures of Molecular Elephants Enduring or Ephemeral? Results from Time-Dependent, Tandem Ion Mobility

   https://doi.org/10.1021/acs.analchem.3c01222  

   Zercher, Benjamin P. ; Hong, Seoyeon ; Roush, Addison E. ; Feng, Yuan ; Bush, Matthew F. ( June 2023 , Analytical Chemistry)

   The structural stability of biomolecules in the gas phase remains an important topic in mass spectrometry applications for structural biology. Here, we evaluate the kinetic stability of native-like protein ions using time-dependent, tandem ion mobility (IM). In these tandem IM experiments, ions of interest are mobility-selected after a first dimension of IM and trapped for up to ∼14 s. Time-dependent, collision cross section distributions are then determined from separations in a second dimension of IM. In these experiments, monomeric protein ions exhibited structural changes specific to both protein and charge state, whereas large protein complexes did not undergo resolvable structural changes on the timescales of these experiments. We also performed energy-dependent experiments, i.e., collision-induced unfolding, as a comparison for time-dependent experiments to understand the extent of unfolding. Collision cross section values observed in energy-dependent experiments using high collision energies were significantly larger than those observed in time-dependent experiments, indicating that the structures observed in time-dependent experiments remain kinetically trapped and retain some memory of their solution-phase structure. Although structural evolution should be considered for highly charged, monomeric protein ions, these experiments demonstrate that higher-mass protein ions can have remarkable kinetic stability in the gas phase. 

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3. Electron Heating in 2D Particle-in-cell Simulations of Quasi-perpendicular Low-beta Shocks

   https://doi.org/10.3847/1538-4357/ad1f69  

   Tran, Aaron ; Sironi, Lorenzo ( April 2024 , The Astrophysical Journal)

   We measure the thermal electron energization in 1D and 2D particle-in-cell simulations of quasi-perpendicular, low-beta (β_p= 0.25) collisionless ion–electron shocks with mass ratiom_i/m_e= 200, fast Mach number${\mathcal{M}}_{\mathrm{ms}}=1$–4, and upstream magnetic field angleθ_Bn= 55°–85° from the shock normal$\hat{\mathit{n}}$. It is known that shock electron heating is described by an ambipolar,B-parallel electric potential jump, Δϕ_∥, that scales roughly linearly with the electron temperature jump. Our simulations have$\mathrm{\Delta }{\varphi }_{\parallel }/(0.5m_{\mathrm{i}}{u_{\mathrm{sh}}}^2)\sim 0.1$–0.2 in units of the pre-shock ions’ bulk kinetic energy, in agreement with prior measurements and simulations. Different ways to measureϕ_∥, including the use of de Hoffmann–Teller frame fields, agree to tens-of-percent accuracy. Neglecting off-diagonal electron pressure tensor terms can lead to a systematic underestimate ofϕ_∥in our low-β_pshocks. We further focus on twoθ_Bn= 65° shocks: a${\mathcal{M}}_{\mathrm{s}}=4$(${\mathcal{M}}_{\mathrm{A}}=1.8$) case with a long, 30d_iprecursor of whistler waves along$\hat{\mathit{n}}$, and a${\mathcal{M}}_{\mathrm{s}}=7$(${\mathcal{M}}_{\mathrm{A}}=3.2$) case with a shorter, 5d_iprecursor of whistlers oblique to both$\hat{\mathit{n}}$andB;d_iis the ion skin depth. Within the precursors,ϕ_∥has a secular rise toward the shock along multiple whistler wavelengths and also has localized spikes within magnetic troughs. In a 1D simulation of the${\mathcal{M}}_{\mathrm{s}}=4$,θ_Bn= 65° case,ϕ_∥shows a weak dependence on the electron plasma-to-cyclotron frequency ratioω_pe/Ω_ce, andϕ_∥decreases by a factor of 2 asm_i/m_eis raised to the true proton–electron value of 1836.

    

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4. Voltage waveform tailoring for high aspect ratio plasma etching of SiO 2 using Ar/CF 4 /O 2 mixtures: Consequences of ion and electron distributions on etch profiles

   https://doi.org/10.1116/6.0002290  

   Krüger, Florian ; Lee, Hyunjae ; Nam, Sang Ki ; Kushner, Mark J. ( January 2023 , Journal of Vacuum Science & Technology A)

   The quality of high aspect ratio (HAR) features etched into dielectrics for microelectronics fabrication using halogen containing low temperature plasmas strongly depends on the energy and angular distribution of the incident ions (IEAD) onto the wafer, as well as potentially that of the electrons (EEAD). Positive ions, accelerated to high energies by the sheath electric field, have narrow angular spreads and can penetrate deeply into HAR features. Electrons typically arrive at the wafer with nearly thermal energy and isotropic angular distributions and so do not directly penetrate deeply into features. These differences can lead to positive charging of the insides of the features that can slow etching rates and produce geometric defects such as twisting. In this work, we computationally investigated the plasma etching of HAR features into SiO 2 using tailored voltage waveforms in a geometrically asymmetric capacitively coupled plasma sustained in an Ar/CF 4 /O 2 mixture at 40 mTorr. The tailored waveform consisted of a sinusoidal wave and its higher harmonics with a fundamental frequency of 1 MHz. We found that some degree of control of the IEADs and EEADs is possible by adjusting the phase of higher harmonics φ through the resulting generation of electrical asymmetry and electric field reversal. However, the IEADs and EEADs cannot easily be separately controlled. The control of IEADs and EEADs is inherently linked. The highest quality feature was obtained with a phase angle φ = 0° as this value generated the largest (most negative) DC self-bias and largest electric field reversal for accelerating electrons into the feature. That said, the consequences of voltage waveform tailoring (VWT) on etched features are dominated by the change in the IEADs. Although VWT does produce EEADs with higher energy and narrower angular spread, the effect of these electrons on the feature compared to thermal electrons is not large. This smaller impact of VWT produced EEADs is attributed to thermal electrons being accelerated into the feature by electric fields produced by the positive in-feature charging. 

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5. Toward systematic architectural design of near-term trapped ion quantum computers

   https://doi.org/10.1145/3511064  

   Murali, Prakash ; Debroy, Dripto M. ; Brown, Kenneth R. ; Martonosi, Margaret ( March 2022 , Communications of the ACM)

   Trapped ions (TIs) are a leading candidate for building Noisy Intermediate-Scale Quantum (NISQ) hardware. TI qubits have fundamental advantages over other technologies, featuring high qubit quality, coherence time, and qubit connectivity. However, current TI systems are small in size and typically use a single trap architecture, which has fundamental scalability limitations. To progress toward the next major milestone of 50--100 qubit TI devices, a modular architecture termed the Quantum Charge Coupled Device (QCCD) has been proposed. In a QCCD-based TI device, small traps are connected through ion shuttling. While the basic hardware components for such devices have been demonstrated, building a 50--100 qubit system is challenging because of a wide range of design possibilities for trap sizing, communication topology, and gate implementations and the need to match diverse application resource requirements. Toward realizing QCCD-based TI systems with 50--100 qubits, we perform an extensive application-driven architectural study evaluating the key design choices of trap sizing, communication topology, and operation implementation methods. To enable our study, we built a design toolflow, which takes a QCCD architecture's parameters as input, along with a set of applications and realistic hardware performance models. Our toolflow maps the applications onto the target device and simulates their execution to compute metrics such as application run time, reliability, and device noise rates. Using six applications and several hardware design points, we show that trap sizing and communication topology choices can impact application reliability by up to three orders of magnitude. Microarchitectural gate implementation choices influence reliability by another order of magnitude. From these studies, we provide concrete recommendations to tune these choices to achieve highly reliable and performant application executions. With industry and academic efforts underway to build TI devices with 50-100 qubits, our insights have the potential to influence QC hardware in the near future and accelerate the progress toward practical QC systems. 

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