skip to main content
US FlagAn official website of the United States government
dot gov icon
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
https lock icon
Secure .gov websites use HTTPS
A lock ( lock ) or https:// means you've safely connected to the .gov website. Share sensitive information only on official, secure websites.


Title: Micron-Scale Anomalous Hall Sensors Based on FexPt1−x Thin Films with a Large Hall Angle and near the Spin-Reorientation Transition
In this work, we fabricate and characterize an energy-efficient anomalous Hall sensor based on soft-magnetic FexPt1−x thin films with a large anomalous Hall angle. By varying the composition of the FexPt1−x alloy, its layer thickness and interfacial materials, the magnetization is tuned to be near the spin transition between the perpendicular and in-plane reorientations. We performed magneto-transport and noise characterizations on anomalous Hall sensors with a small sensing area of 20 × 20 µm2 in the 180 to 350 K temperature range. We found the best performance in a 1.25-nm-thick Fe0.48Pt0.52 sandwiched by two 1.6-nm-thick MgO layers at room temperature. The sensor has a large anomalous Hall angle of 1.95%. Moreover, it has the best field detectability of 237.5 nT/√Hz at 1 Hz and 15.3 nT/√Hz at 10 kHz, as well as a high dynamic reserve of 112.0 dB. These results suggest that the FexPt1−x alloy system is suitable for energy-efficient anomalous Hall sensors, particularly in micro-sensing applications.  more » « less
Award ID(s):
1936221
PAR ID:
10300463
Author(s) / Creator(s):
; ; ;
Date Published:
Journal Name:
Nanomaterials
Volume:
11
Issue:
4
ISSN:
2079-4991
Page Range / eLocation ID:
854
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
More Like this
  1. Abstract Magnetic topological states refer to a class of exotic phases in magnetic materials with the non‐trivial topological property determined by magnetic spin configurations. An example of such states is the quantum anomalous Hall (QAH) state, which is a zero magnetic field manifestation of the quantum Hall effect. Current research in this direction focuses on QAH insulators with a thickness of less than 10 nm. Here, molecular beam epitaxy (MBE) is employed to synthesize magnetic TI trilayers with a thickness of up to ≈106 nm. It is found that these samples exhibit well‐quantized Hall resistance and vanishing longitudinal resistance at zero magnetic field. By varying the magnetic dopants, gate voltages, temperature, and external magnetic fields, the properties of these thick QAH insulators are examined and the robustness of the 3D QAH effect is demonstrated. The realization of the well‐quantized 3D QAH effect indicates that the nonchiral side surface states of the thick magnetic TI trilayers are gapped and thus do not affect the QAH quantization. The 3D QAH insulators of hundred‐nanometer thickness provide a promising platform for the exploration of fundamental physics, including axion physics and image magnetic monopole, and the advancement of electronic and spintronic devices to circumvent Moore's law. 
    more » « less
  2. Recent experiments on multilayer rhombohedral graphene have unearthed a number of interesting phenomena in the regime where integer and fractional quantum anomalous Hall phenomena were previously reported. Specifically, at low temperature (𝑇) and low applied currents, an “extended” integer quantum anomalous Hall (EIQAH) state is seen over a wide range of the phase diagram. As the current is increased, at low 𝑇, the EIQAH state undergoes a phase transition to a metallic state at generic fillings, and to the fractional quantum anomalous Hall (FQAH) state at the Jain fillings. Increasing temperature at the Jain fillings also leads to an evolution out of the EIQAH state to the Jain state. Here we provide an interpretation of many of these observations. We describe the EIQAH state as a crystalline state (either of holes doped into the 𝜈=1 state or an anomalous Hall crystal of electrons) that breaks moiré translation symmetry. At generic fillings, we show how an electric current-induced depinning transition of the crystalline order leads to peculiar nonlinear current-voltage curves consistent with the experiment. At Jain fillings, we propose that the depinning transition is preempted by an equilibrium transition between EIQAH and Jain FQAH states. This transition occurs due to the large polarizability of the Jain FQAH states, which enables them to effectively lower their energy in an applied electric field compared to the crystal states. We also discuss the finite-temperature evolution in terms of the relative entropies of the crystalline and FQAH states. 
    more » « less
  3. Spoofing a passive Hall sensor with fake magnetic fields can inject false data into the downstream of connected systems. Several works have tried to provide a defense against the intentional spoofing to different sensors over the last six years. However, they either only work on active sensors or against externally injected unwanted weak signals (e.g., EMIs, acoustics, ultrasound, etc.), which can only spoof sensor output in its linear region. However, they do not work against a strong magnetic spoofing attack that can drive the passive Hall sensor output in its saturation region. We name this as the saturation attack. In the saturation region, the output gets flattened, and no information can be retrieved, resulting in a denial-of-service attack on the sensor.Our work begins to fill this gap by providing a defense named PreMSat against the saturation attack on passive Hall sensors. The core idea behind PreMSat is that it cangenerate an internal magnetic field having the same strength but in opposite polarity to external magnetic fields injected by an attacker. Therefore, the generated internal magnetic field by PreMSat can nullify the injected external field while preventing: (i) intentional spoofing in the sensor’s linear region, and (ii) saturation attack in the saturation region. PreMSat integrates a low-resistance magnetic path to collect the injected external magnetic fields and utilizes a finely tuned PID controller to nullify the external fields in real-time. PreMSat can prevent the magnetic saturation attack having a strength up to ∼4200 A-t within a frequency range of 0 Hz–30 kHz with low cost (∼$14), whereas the existing works cannot prevent saturation attacks with any strength. Moreover, it works against saturation attacks originating from any type, such as constant, sinusoidal, and pulsating magnetic fields. We did over 300 experiments on ten different industry-used Hall sensors from four different manufacturers to prove the efficacy of PreMSat and found that the correlation coefficient between the signals before the attack and after the attack is greater than 0.94 in every test case. Moreover, we create a prototype of PreMSat and evaluate its performance in a practical system — a grid-tied solar inverter. We find that PreMSat can satisfactorily prevent the saturation attack on passive Hall sensors in real-time. 
    more » « less
  4. Abstract The interaction between strong correlation and Berry curvature is an open territory of in the field of quantum materials. Here we report large anomalous Hall conductivity in a Kondo lattice ferromagnet USbTe which is dominated by intrinsic Berry curvature at low temperatures. However, the Berry curvature induced anomalous Hall effect does not follow the scaling relation derived from Fermi liquid theory. The onset of the Berry curvature contribution coincides with the Kondo coherent temperature. Combined with ARPES measurement and DMFT calculations, this strongly indicates that Berry curvature is hosted by the flat bands induced by Kondo hybridization at the Fermi level. Our results demonstrate that the Kondo coherence of the flat bands has a dramatic influence on the low temperature physical properties associated with the Berry curvature, calling for new theories of scaling relations of anomalous Hall effect to account for the interaction between strong correlation and Berry curvature. 
    more » « less
  5. The study aimed to investigate the underlying physics limiting the temperature stability and performance of non-surface passivated Al0.34Ga0.66N/GaN Hall effect sensors, including contacts, under atmospheric conditions. The results obtained from analyzing the microstructural evolution in the Al0.34Ga0.66N/GaN Hall sensor heterostructure were found to correlate with the electrical performance of the Hall effect sensor. High-resolution x-ray photoelectron spectroscopy studies revealed the signature of surface oxidation in the GaN cap layer, as well as a slight out-diffusion of “Al” from the AlGaN barrier layer. To prevent the formation of a bumpy surface morphology at the Ohmic contact, we investigated the impact of “Pt” top Ohmic contacts. The application of a top “Pt” contact stack resulted in a smooth Ohmic contact surface and provided evidence that the bumpy surface morphology in Au-based Ohmic contacts is due to the formation of an Al-Au viscous alloy during rapid thermal annealing. In the early stages of thermal aging, the small drop in contact resistivity stabilized with subsequent thermal aging past the initial 550 h at 200 °C. The outcome is that the Al0.34Ga0.66N/GaN Hall effect sensors, even without surface passivation, exhibited a stable response to applied magnetic fields with no sign of significant degradation after 2800 h of thermal aging at 200 °C under atmospheric conditions. This observed stability in the Hall sensor without surface passivation can be attributed to a self-imposed surface oxidation of the cap layer during the early stages of aging, which serves as a protective layer for the device during subsequent extended periods of thermal aging at 200 °C. 
    more » « less