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1. On structural topology optimization considering material nonlinearity: Plane strain versus plane stress solutions

   https://doi.org/10.1016/j.advengsoft.2018.08.017  

   Chi, Heng ; Ramos, Davi L. ; Ramos, Adeildo S. ; Paulino, Glaucio H. ( May 2019 , Advances in Engineering Software)
2. Out-of-plane chiral domain wall spin-structures in ultrathin in-plane magnets

   https://doi.org/10.1038/ncomms15302  

   Chen, Gong ; Kang, Sang Pyo ; Ophus, Colin ; N’Diaye, Alpha T. ; Kwon, Hee Young ; Qiu, Ryan T. ; Won, Changyeon ; Liu, Kai ; Wu, Yizheng ; Schmid, Andreas K. ( May 2017 , Nature Communications)
3. In-plane uniaxial pressure-induced out-of-plane antiferromagnetic moment and critical fluctuations in BaFe2As2

   https://doi.org/10.1038/s41467-020-19421-5  

   Liu, Panpan ; Klemm, Mason L. ; Tian, Long ; Lu, Xingye ; Song, Yu ; Tam, David W. ; Schmalzl, Karin ; Park, J. T. ; Li, Yu ; Tan, Guotai ; et al ( December 2020 , Nature Communications)

   Abstract A small in-plane external uniaxial pressure has been widely used as an effective method to acquire single domain iron pnictide BaFe 2 As 2 , which exhibits twin-domains without uniaxial strain below the tetragonal-to-orthorhombic structural (nematic) transition temperature T s . Although it is generally assumed that such a pressure will not affect the intrinsic electronic/magnetic properties of the system, it is known to enhance the antiferromagnetic (AF) ordering temperature T N ( <  T s ) and create in-plane resistivity anisotropy above T s . Here we use neutron polarization analysis to show that such a strain on BaFe 2 As 2 also induces a static or quasi-static out-of-plane ( c -axis) AF order and its associated critical spin fluctuations near T N / T s . Therefore, uniaxial pressure necessary to detwin single crystals of BaFe 2 As 2 actually rotates the easy axis of the collinear AF order near T N / T s , and such effects due to spin-orbit coupling must be taken into account to unveil the intrinsic electronic/magnetic properties of the system.
4. Inkjet-defined site-selective (IDSS) growth for controllable production of in-plane and out-of-plane MoS ₂ device arrays

   https://doi.org/10.1039/D0NR04012F  

   Ryu, Byunghoon ; Yoon, Jeong Seop ; Kazyak, Eric ; Chen, Kuan-Hung ; Park, Younggeun ; Dasgupta, Neil P. ; Liang, Xiaogan ( August 2020 , Nanoscale)

   Along with the increasing interest in MoS 2 as a promising electronic material, there is also an increasing demand for nanofabrication technologies that are compatible with this material and other relevant layered materials. In addition, the development of scalable nanofabrication approaches capable of directly producing MoS 2 device arrays is an imperative task to speed up the design and commercialize various functional MoS 2 -based devices. The desired fabrication methods need to meet two critical requirements. First, they should minimize the involvement of resist-based lithography and plasma etching processes, which introduce unremovable contaminations to MoS 2 structures. Second, they should be able to produce MoS 2 structures with in-plane or out-of-plane edges in a controlled way, which is key to increase the usability of MoS 2 for various device applications. Here, we introduce an inkjet-defined site-selective (IDSS) method that meets these requirements. IDSS includes two main steps: (i) inkjet printing of microscale liquid droplets that define the designated sites for MoS 2 growth, and (ii) site-selective growth of MoS 2 at droplet-defined sites. Moreover, IDSS is capable of generating MoS 2 with different structures. Specifically, an IDSS process using deionized (DI) water droplets mainly produces in-plane MoS 2 features, whereasmore »the processes using graphene ink droplets mainly produce out-of-plane MoS 2 features rich in exposed edges. Using out-of-plane MoS 2 structures, we have demonstrated the fabrication of miniaturized on-chip lithium ion batteries, which exhibit reversible lithiation/delithiation capacity. This IDSS method could be further expanded as a scalable and reliable nanomanufacturing method for generating miniaturized on-chip energy storage devices.« less
5. The stellar mass Fundamental Plane: the virial relation and a very thin plane for slow rotators

   https://doi.org/10.1093/mnras/staa1064  

   Bernardi, M ; Domínguez Sánchez, H ; Margalef-Bentabol, B ; Nikakhtar, F ; Sheth, R K ( June 2020 , Monthly Notices of the Royal Astronomical Society)

   ABSTRACT Early-type galaxies – slow and fast rotating ellipticals (E-SRs and E-FRs) and S0s/lenticulars – define a Fundamental Plane (FP) in the space of half-light radius Re, enclosed surface brightness Ie, and velocity dispersion σe. Since Ie and σe are distance-independent measurements, the thickness of the FP is often expressed in terms of the accuracy with which Ie and σe can be used to estimate sizes Re. We show that: (1) The thickness of the FP depends strongly on morphology. If the sample only includes E-SRs, then the observed scatter in Re is $\sim 16{{\ \rm per\ cent}}$, of which only $\sim 9{{\ \rm per\ cent}}$ is intrinsic. Removing galaxies with M* < 1011 M⊙ further reduces the observed scatter to $\sim 13{{\ \rm per\ cent}}$ ($\sim 4{{\ \rm per\ cent}}$ intrinsic). The observed scatter increases to $\sim 25{{\ \rm per\ cent}}$ usually quoted in the literature if E-FRs and S0s are added. If the FP is defined using the eigenvectors of the covariance matrix of the observables, then the E-SRs again define an exceptionally thin FP, with intrinsic scatter of only 5 per cent orthogonal to the plane. (2) The structure within the FP is most easily understood as arising frommore »the fact that Ie and σe are nearly independent, whereas the Re−Ie and Re−σe correlations are nearly equal and opposite. (3) If the coefficients of the FP differ from those associated with the virial theorem the plane is said to be ‘tilted’. If we multiply Ie by the global stellar mass-to-light ratio M*/L and we account for non-homology across the population by using Sérsic photometry, then the resulting stellar mass FP is less tilted. Accounting self-consistently for M*/L gradients will change the tilt. The tilt we currently see suggests that the efficiency of turning baryons into stars increases and/or the dark matter fraction decreases as stellar surface brightness increases.« less