Goswami, Aranya, Markman, Brian, Brunelli, Simone T., Chatterjee, Shouvik, Klamkin, Jonathan, Rodwell, Mark, and Palmstrøm, Chris J.. Confined lateral epitaxial overgrowth of InGaAs: Mechanisms and electronic properties. Retrieved from https://par.nsf.gov/biblio/10300859. Journal of Applied Physics 130.8 Web. doi:10.1063/5.0050802.

Goswami, Aranya, Markman, Brian, Brunelli, Simone T., Chatterjee, Shouvik, Klamkin, Jonathan, Rodwell, Mark, & Palmstrøm, Chris J.. Confined lateral epitaxial overgrowth of InGaAs: Mechanisms and electronic properties. Journal of Applied Physics, 130 (8). Retrieved from https://par.nsf.gov/biblio/10300859. https://doi.org/10.1063/5.0050802

Goswami, Aranya, Markman, Brian, Brunelli, Simone T., Chatterjee, Shouvik, Klamkin, Jonathan, Rodwell, Mark, and Palmstrøm, Chris J.. "Confined lateral epitaxial overgrowth of InGaAs: Mechanisms and electronic properties". Journal of Applied Physics 130 (8). Country unknown/Code not available. https://doi.org/10.1063/5.0050802. https://par.nsf.gov/biblio/10300859.

@article{osti_10300859,
place = {Country unknown/Code not available}, title = {Confined lateral epitaxial overgrowth of InGaAs: Mechanisms and electronic properties}, url = {https://par.nsf.gov/biblio/10300859}, DOI = {10.1063/5.0050802}, abstractNote = {}, journal = {Journal of Applied Physics}, volume = {130}, number = {8}, author = {Goswami, Aranya and Markman, Brian and Brunelli, Simone T. and Chatterjee, Shouvik and Klamkin, Jonathan and Rodwell, Mark and Palmstrøm, Chris J.}, }