Confined lateral epitaxial overgrowth of InGaAs: Mechanisms and electronic properties
- Award ID(s):
- 1640030
- NSF-PAR ID:
- 10300859
- Date Published:
- Journal Name:
- Journal of Applied Physics
- Volume:
- 130
- Issue:
- 8
- ISSN:
- 0021-8979
- Page Range / eLocation ID:
- 085302
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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