skip to main content


Title: Confined lateral epitaxial overgrowth of InGaAs: Mechanisms and electronic properties
Award ID(s):
1640030
NSF-PAR ID:
10300859
Author(s) / Creator(s):
; ; ; ; ; ;
Date Published:
Journal Name:
Journal of Applied Physics
Volume:
130
Issue:
8
ISSN:
0021-8979
Page Range / eLocation ID:
085302
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
More Like this
No document suggestions found