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Title: Atomic layer deposition of TiN/Ru gate in InP MOSFETs
Award ID(s):
1640030
PAR ID:
10300860
Author(s) / Creator(s):
; ; ; ;
Date Published:
Journal Name:
Applied Physics Letters
Volume:
119
Issue:
12
ISSN:
0003-6951
Page Range / eLocation ID:
123502
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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