Abstract Piezoelectric materials enable the conversion of mechanical energy into electrical energy and vice‐versa. Ultrahigh piezoelectricity has been only observed in single crystals. Realization of piezoelectric ceramics with longitudinal piezoelectric constant (d33) close to 2000 pC N–1, which combines single crystal‐like high properties and ceramic‐like cost effectiveness, large‐scale manufacturing, and machinability will be a milestone in advancement of piezoelectric ceramic materials. Here, guided by phenomenological models and phase‐field simulations that provide conditions for flattening the energy landscape of polarization, a synergistic design strategy is demonstrated that exploits compositionally driven local structural heterogeneity and microstructural grain orientation/texturing to provide record piezoelectricity in ceramics. This strategy is demonstrated on [001]PC‐textured and Eu3+‐doped Pb(Mg1/3Nb2/3)O3‐PbTiO3(PMN‐PT) ceramics that exhibit the highest piezoelectric coefficient (small‐signald33of up to 1950 pC N–1and large‐signald33* of ≈2100 pm V–1) among all the reported piezoelectric ceramics. Extensive characterization conducted using high‐resolution microscopy and diffraction techniques in conjunction with the computational models reveals the underlying mechanisms governing the piezoelectric performance. Further, the impact of losses on the electromechanical coupling is identified, which plays major role in suppressing the percentage of piezoelectricity enhancement, and the fundamental understanding of loss in this study sheds light on further enhancement of piezoelectricity. These results on cost‐effective and record performance piezoelectric ceramics will launch a new generation of piezoelectric applications.
more »
« less
Thickness-Dependent Piezoelectric Property from Quasi-Two-Dimensional Zinc Oxide Nanosheets with Unit Cell Resolution
A quantitative understanding of the nanoscale piezoelectric property will unlock many application potentials of the electromechanical coupling phenomenon under quantum confinement. In this work, we present an atomic force microscopy- (AFM-) based approach to the quantification of the nanometer-scale piezoelectric property from single-crystalline zinc oxide nanosheets (NSs) with thicknesses ranging from 1 to 4 nm. By identifying the appropriate driving potential, we minimized the influences from electrostatic interactions and tip-sample coupling, and extrapolated the thickness-dependent piezoelectric coefficient ( d 33 ). By averaging the measured d 33 from NSs with the same number of unit cells in thickness, an intriguing tri-unit-cell relationship was observed. From NSs with 3 n unit cell thickness ( n = 1 , 2, 3), a bulk-like d 33 at a value of ~9 pm/V was obtained, whereas NSs with other thickness showed a ~30% higher d 33 of ~12 pm/V. Quantification of d 33 as a function of ZnO unit cell numbers offers a new experimental discovery toward nanoscale piezoelectricity from nonlayered materials that are piezoelectric in bulk.
more »
« less
- Award ID(s):
- 1709025
- PAR ID:
- 10300935
- Date Published:
- Journal Name:
- Research
- Volume:
- 2021
- ISSN:
- 2639-5274
- Page Range / eLocation ID:
- 1 to 7
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
More Like this
-
-
Abstract Achieving substantial electrostrain alongside a large effective piezoelectric strain coefficient (d33*) in piezoelectric materials remains a formidable challenge for advanced actuator applications. Here, a straightforward approach to enhance these properties by strategically designing the domain structure and controlling the domain switching through the introduction of arrays of ordered {100}<100> dislocations is proposed. This dislocation engineering yields an intrinsic lock‐in steady–state electrostrain of 0.69% at a low field of 10 kV cm−1without external stress and an output strain energy density of 5.24 J cm−3in single‐crystal BaTiO3, outperforming the benchmark piezoceramics and relaxor ferroelectric single‐crystals. Additionally, applying a compression stress of 6 MPa fully unlocks electrostrains exceeding 1%, yielding a remarkabled33* value over 10 000 pm V−1and achieving a record‐high strain energy density of 11.67 J cm−3. Optical and transmission electron microscopy, paired with laboratory and synchrotron X‐ray diffraction, is employed to rationalize the observed electrostrain. Phase‐field simulations further elucidate the impact of charged dislocations on domain nucleation and domain switching. These findings present an effective and sustainable strategy for developing high‐performance, lead‐free piezoelectric materials without the need for additional chemical elements, offering immense potential for actuator technologies.more » « less
-
Additive manufacturing (AM), also known as three-dimensional (3D) printing, is thriving as an effective and robust method in fabricating architected piezoelectric structures, yet most of the commonly adopted printing techniques often face the inherent speed-accuracy trade-off, limiting their speed in manufacturing sophisticated parts containing micro-/nanoscale features. Herein, stabilized, photo-curable resins comprising chemically functionalized piezoelectric nanoparticles (PiezoNPs) were formulated, from which microscale architected 3D piezoelectric structures were printed continuously via micro continuous liquid interface production ( μ CLIP) at speeds of up to ~60 μ m s -1 , which are more than 10 times faster than the previously reported stereolithography-based works. The 3D-printed functionalized barium titanate (f-BTO) composites reveal a bulk piezoelectric charge constant d 33 of 27.70 pC N -1 with the 30 wt% f-BTO. Moreover, rationally designed lattice structures that manifested enhanced, tailorable piezoelectric sensing performance as well as mechanical flexibility were tested and explored in diverse flexible and wearable self-powered sensing applications, e.g., motion recognition and respiratory monitoring.more » « less
-
Although high piezoelectric coefficients have recently been observed in poly(vinylidene fluoride- co -trifluoroethylene) [P(VDF-TrFE)] random copolymers, they have low Curie temperatures, which makes their piezoelectricity thermally unstable. It has been challenging to achieve high piezoelectric performance from the more thermally stable PVDF homopolymer. In this report, we describe how high-power ultrasonic processing was used to induce a hard-to-soft piezoelectric transition and improve the piezoelectric coefficient d 31 in neat PVDF. After high-power ultrasonication for 20 min, a uniaxially stretched and poled PVDF film exhibited a high d 31 of 50.2 ± 1.7 pm V −1 at room temperature. Upon heating to 65 °C, the d 31 increased to a maximum value of 76.2 ± 1.2 pm V −1 , and the high piezoelectric performance persisted up to 110 °C. The enhanced piezoelectricity was attributed to the relaxor-like secondary crystals in the oriented amorphous fraction, broken off from the primary crystals by ultrasonication, as suggested by differential scanning calorimetry and broadband dielectric spectroscopy studies.more » « less
-
Abstract The piezoelectric and ferroelectric applications of heterovalent ternary materials are not well explored. Epitaxial MgSiN2films are grown at 600 °C on (111)Pt//(001)Al2O3substrates by the reactive sputtering method using metallic Mg and Si under the N2atmosphere. Detailed X‐ray diffraction measurements and transmission electron microscopy observations revealed that the epitaxially grown films on the substrates have a hexagonal wurtzite structure withc‐axis out‐of‐plane orientation. The random occupation of this structure by Mg and Si differs from that of the previously reported structure in which these two cations periodically occupy the cationic sites. However, the lattice spacings closely approximate those that are previously reported, irrespective of the ordering, and they are almost comparable with those of (Al0.8Sc0.2)N. The wide bandgap of >5.0 eV in deposited MgSiN2is compatible with that of AlN and suggests durability against the application of strong external electric fields, possibly to induce polarization switching. In addition, MgSiN2is shown to have piezoelectric properties with an effectived33value of 2.3 pm V−1for the first time. This work demonstrates the compositional expansion of hexagonal wurtzite to heterovalent ternary nitrides for novel piezoelectric materials, whose ferroelectricity is expected.more » « less