The thermophysical properties of 1D micro/nanoscale materials could differ significantly from those of their bulk counterparts due to intensive energy carrier scattering by structures. This work provides an in-depth review of cutting-edge techniques employed for transient characterization of thermophysical properties at the micro/nanoscale scale. In terms of transient excitation, step Joule heating, step laser heating, pulsed laser heating, and frequency domain amplitude-modulated laser heating are covered. For thermal probing, electrical and Raman scattering-based physical principles are used. These techniques enable the measurement of thermal conductivity, thermal diffusivity, and specific heat from the sub-mm level down to the atomic level (single-atom thickness). This review emphasizes the advantages of these techniques over steady state techniques and their physics, challenges, and potential applications, highlighting their significance in unraveling the intricate thermal transport phenomena to the atomic level of 1D materials.
more »
« less
Thermal behavior of materials in laser-assisted extreme manufacturing: Raman-based novel characterization
Abstract Laser-assisted manufacturing (LAM) is a technique that performs machining of materials using a laser heating process. During the process, temperatures can rise above over 2000 °C. As a result, it is crucial to explore the thermal behavior of materials under such high temperatures to understand the physics behind LAM and provide feedback for manufacturing optimization. Raman spectroscopy, which is widely used for structure characterization, can provide a novel way to measure temperature during LAM. In this review, we discuss the mechanism of Raman-based temperature probing, its calibration, and sources of uncertainty/error, and how to control them. We critically review the Raman-based temperature measurement considering the spatial resolution under near-field optical heating and surface structure-induced asymmetries. As another critical aspect of Raman-based temperature measurement, temporal resolution is also reviewed to cover various ways of realizing ultrafast thermal probing. We conclude with a detailed outlook on Raman-based temperature probing in LAM and issues that need special attention.
more »
« less
- Award ID(s):
- 1930866
- PAR ID:
- 10303670
- Publisher / Repository:
- IOP Publishing
- Date Published:
- Journal Name:
- International Journal of Extreme Manufacturing
- Volume:
- 2
- Issue:
- 3
- ISSN:
- 2631-8644
- Page Range / eLocation ID:
- Article No. 032004
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
More Like this
-
-
Abstract Raman spectroscopy-based temperature sensing usually tracks the change of Raman wavenumber, linewidth and intensity, and has found very broad applications in characterizing the energy and charge transport in nanomaterials over the last decade. The temperature coefficients of these Raman properties are highly material-dependent, and are subjected to local optical scattering influence. As a result, Raman-based temperature sensing usually suffers quite large uncertainties and has low sensitivity. Here, a novel method based on dual resonance Raman phenomenon is developed to precisely measure the absolute temperature rise of nanomaterial (nm WS 2 film in this work) from 170 to 470 K. A 532 nm laser (2.33 eV photon energy) is used to conduct the Raman experiment. Its photon energy is very close to the excitonic transition energy of WS 2 at temperatures close to room temperature. A parameter, termed resonance Raman ratio (R3) Ω = I A 1g / I E 2g is introduced to combine the temperature effects on resonance Raman scattering for the A 1g and E 2g modes. Ω has a change of more than two orders of magnitude from 177 to 477 K, and such change is independent of film thickness and local optical scattering. It is shown that when Ω is varied by 1%, the temperature probing sensitivity is 0.42 K and 1.16 K at low and high temperatures, respectively. Based on Ω, the in-plane thermal conductivity ( k ) of a ∼25 nm-thick suspended WS 2 film is measured using our energy transport state-resolved Raman (ET-Raman). k is found decreasing from 50.0 to 20.0 Wm −1 K −1 when temperature increases from 170 to 470 K. This agrees with previous experimental and theoretical results and the measurement data using our FET-Raman. The R3 technique provides a very robust and high-sensitivity method for temperature probing of nanomaterials and will have broad applications in nanoscale thermal transport characterization, non-destructive evaluation, and manufacturing monitoring.more » « less
-
Abstract Raman spectroscopy has been widely used to measure thermophysical properties of 2D materials. The local intense photon heating induces strong thermal nonequilibrium between optical and acoustic phonons. Both first principle calculations and recent indirect Raman measurements prove this phenomenon. To date, no direct measurement of the thermal nonequilibrium between optical and acoustic phonons has been reported. Here, this physical phenomenon is directly characterized for the first time through a novel approach combining both electrothermal and optothermal techniques. While the optical phonon temperature is determined from Raman wavenumber, the acoustic phonon temperature is precisely determined using high‐precision thermal conductivity and laser power absorption that are measured with negligible nonequilibrium among energy carriers. For graphene paper, the energy coupling factor between in‐plane optical and overall acoustic phonons is found at (1.59–3.10) × 1015W m−3K−1, agreeing well with the quantum mechanical modeling result of 4.1 × 1015W m−3K−1. Under ≈1 µm diameter laser heating, the optical phonon temperature rise is over 80% higher than that of the acoustic phonons. This observation points out the importance of subtracting optical–acoustic phonon thermal nonequilibrium in Raman‐based thermal characterization.more » « less
-
Micro-Raman spectroscopy has become an important tool in probing thermophysical properties in functional materials. Localized heating by the focused Raman excitation laser beam can produce both stress and local nonequilibrium phonons in the material. Here, we investigate the effects of hot optical phonons in the Raman spectra of molybdenum disulfide and distinguish them from those caused by thermally induced compressive stress, which causes a Raman frequency blue shift. We use a thermomechanical analysis to correct for this stress effect in the equivalent lattice temperature extracted from the measured Raman peak shift. When the heating Gaussian laser beam is reduced to 0.71 μm, the corrected peak shift temperature rise is 17% and 8%, respectively, higher than those determined from the measured peak shift and linewidth without the stress correction, and 32% smaller than the optical phonon temperature rise obtained from the anti-Stokes to Stokes intensity ratio. This nonequilibrium between the hot optical phonons and the lattice vanishes as the beam width increases to 1.53 μm. Much less pronounced than those reported in prior micro-Raman measurements of suspended graphene, this observed hot phonon behavior agrees with a first-principles based multitemperature model of overpopulated zone-center optical phonons compared to other optical phonons in the Brillouin zone and acoustic phonons of this prototypical transition metal dichalcogenide. The findings provide detailed insight into the energy relaxation processes in this emerging electronic and optoelectronic material and clarify an important question in micro-Raman measurements of thermal transport in this and other two-dimensional materials.more » « less
-
Upon laser irradiation, 2D materials experience a cascading energy transfer from electrons to optical phonons (OPs) and then to acoustic phonons (APs), resulting in a significant thermal non-equilibrium among energy carriers. This non-equilibrium presents challenges for Raman-based thermal characterization, as Raman scattering measures only OP temperature rise, while APs are the primary energy carriers. Despite recent efforts to address this issue, OP–AP thermal non-equilibrium in supported 2D materials remains poorly resolved. Here, we develop a method to distinguish the OP and AP temperature rises based on their different temporal thermal responses under laser irradiation: the OP–AP temperature difference responds almost immediately (∼a few to tens of ps), while the AP temperature rise takes longer to establish (∼tens of ns). Using energy transport-state resolved Raman, we probe the transient thermal response of Si-supported nm-thick MoS2from 20 to 100 ns. We find that the OP–AP temperature difference exceeds 120% of the AP temperature rise under ∼0.439 µm radius laser heating. The intrinsic interfacial thermal conductance of the samples, based on the true AP temperature rise, varies from 0.199 to 1.46 MW·m−2·K−1, showing an increasing trend with sample thickness.more » « less
An official website of the United States government
