Compositional and phase dependence of elastic modulus of crystalline and amorphous Hf 1- x Zr x O 2 thin films

Fields, Shelby S.  (ORCID:0000000342447997); Olson, David H.  (ORCID:0000000223261102); Jaszewski, Samantha T.  (ORCID:0000000249581219); Fancher, Chris M.  (ORCID:0000000239525168); Smith, Sean W.; Dickie, Diane A.  (ORCID:0000000309393309); Esteves, Giovanni  (ORCID:0000000324317136); Henry, M. David; Davids, Paul S.  (ORCID:000000024498799X); Hopkins, Patrick E.  (ORCID:000000023403743X); Ihlefeld, Jon F.  (ORCID:0000000301668136)

doi:10.1063/5.0044702

Secondary‐ion mass spectrometry (SIMS) is used to determine impurity concentrations of carbon and oxygen in two scandium‐containing nitride semiconductor multilayer heterostructures: Sc_xGa_1−xN/GaN and Sc_xAl_1−xN/AlN grown by molecular beam epitaxy (MBE). In the Sc_xGa_1−xN/GaN heterostructure grown in metal‐rich conditions on GaN–SiC template substrates with Sc contents up to 28 at%, the oxygen concentration is found to be below 1 × 10¹⁹ cm⁻³, with an increase directly correlated with the scandium content. In the Sc_xAl_1−xN–AlN heterostructure grown in nitrogen‐rich conditions on AlN–Al₂O₃template substrates with Sc contents up to 26 at%, the oxygen concentration is found to be between 10¹⁹and 10²¹ cm⁻³, again directly correlated with the Sc content. The increase in oxygen and carbon takes place during the deposition of scandium‐alloyed layers.

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