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Title: Electron beam irradiation of gallium nitride-on-silicon betavoltaics fabricated with a triple mesa etch
Authors:
 ;  ;  ;  
Publication Date:
NSF-PAR ID:
10306535
Journal Name:
Journal of Applied Physics
Volume:
130
Issue:
17
Page Range or eLocation-ID:
Article No. 174503
ISSN:
0021-8979
Publisher:
American Institute of Physics
Sponsoring Org:
National Science Foundation
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