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1. The Magnetism of Nonstoichiometric Sr ₂ Cr _1+x Re _1–x O ₆ (0 < x < 0.5) Double Perovskites

   https://doi.org/10.1021/acs.inorgchem.3c03435  

   da_Cruz_Pinha_Barbosa, Victor; Das, Shreya; Saha-Dasgupta, Tanusri; Woodward, Patrick M (December 2023, Inorganic Chemistry)
2. Annealing Effects on the Band Alignment of ALD SiO ₂ on (In _x Ga _1−x ) ₂ O ₃ for x = 0.25–0.74

   https://doi.org/10.1149/2162-8777/ab8364  

   Fares, Chaker; Xian, Minghan; Smith, David J.; McCartney, M. R.; Kneiß, Max; von Wenckstern, Holger; Grundmann, Marius; Tadjer, Marko; Ren, Fan; Pearton, S. J. (April 2020, ECS Journal of Solid State Science and Technology)

   The band alignment of Atomic Layer Deposited SiO₂on (In_xGa_1−x)₂O₃at varying indium concentrations is reported before and after annealing at 450 °C and 600 °C to simulate potential processing steps during device fabrication and to determine the thermal stability of MOS structures in high-temperature applications. At all indium concentrations studied, the valence band offsets (VBO) showed a nearly constant decrease as a result of 450 °C annealing. The decrease in VBO was −0.35 eV for (In_0.25Ga_0.75)₂O₃, −0.45 eV for (In_0.42Ga_0.58)₂O₃, −0.40 eV for (In_0.60Ga_0.40)₂O₃, and −0.35 eV (In_0.74Ga_0.26)₂O₃for 450 °C annealing. After annealing at 600 °C, the band alignment remained stable, with <0.1 eV changes for all structures examined, compared to the offsets after the 450 °C anneal. The band offset shifts after annealing are likely due to changes in bonding at the heterointerface. Even after annealing up to 600 °C, the band alignment remains type I (nested gap) for all indium compositions of (In_xGa_1−x)₂O₃studied. 

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3. Trend in the Electron Affinities of Fluorophenyl Radicals ·C ₆ H _5-x F _x (1 ≤ x ≤ 4)

   https://doi.org/10.1021/acs.jpca.3c04327  

   McGee, Conor J.; McGinnis, Kristen Rose; Jarrold, Caroline Chick (August 2023, The Journal of Physical Chemistry A)
4. Transport Properties of GdTe _{1.8– x} As _x ( x = 0, 0.04)

   https://doi.org/10.1002/ejic.202000195  

   Poddig, Hagen; Hobbis, Dean; Alzahrani, Noha; Doert, Thomas; Nolas, George S. (June 2020, European Journal of Inorganic Chemistry)
5. Oxygen Incorporation in the Molecular Beam Epitaxy Growth of Sc _x Ga _1−x N and Sc _x Al _1−x N

   https://doi.org/10.1002/pssb.201900612  

   Casamento, Joseph; Xing, Huili Grace; Jena, Debdeep (January 2020, physica status solidi (b))

   Secondary‐ion mass spectrometry (SIMS) is used to determine impurity concentrations of carbon and oxygen in two scandium‐containing nitride semiconductor multilayer heterostructures: Sc_xGa_1−xN/GaN and Sc_xAl_1−xN/AlN grown by molecular beam epitaxy (MBE). In the Sc_xGa_1−xN/GaN heterostructure grown in metal‐rich conditions on GaN–SiC template substrates with Sc contents up to 28 at%, the oxygen concentration is found to be below 1 × 10¹⁹ cm⁻³, with an increase directly correlated with the scandium content. In the Sc_xAl_1−xN–AlN heterostructure grown in nitrogen‐rich conditions on AlN–Al₂O₃template substrates with Sc contents up to 26 at%, the oxygen concentration is found to be between 10¹⁹and 10²¹ cm⁻³, again directly correlated with the Sc content. The increase in oxygen and carbon takes place during the deposition of scandium‐alloyed layers. 

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