Mahmoodi, Mohammad Reza, Fahimi, Zahra, Larimian, Shabnam, Nili, Hussein, Kim, Hyugin, and Strukov, Dmitri B. A Strong Physically Unclonable Function With >2⁸⁰ CRPs and <1.4% BER Using Passive ReRAM Technology. Retrieved from https://par.nsf.gov/biblio/10311385. IEEE Solid-State Circuits Letters 3. Web. doi:10.1109/LSSC.2020.3010255.

Mahmoodi, Mohammad Reza, Fahimi, Zahra, Larimian, Shabnam, Nili, Hussein, Kim, Hyugin, & Strukov, Dmitri B. A Strong Physically Unclonable Function With >2⁸⁰ CRPs and <1.4% BER Using Passive ReRAM Technology. IEEE Solid-State Circuits Letters, 3 (). Retrieved from https://par.nsf.gov/biblio/10311385. https://doi.org/10.1109/LSSC.2020.3010255

Mahmoodi, Mohammad Reza, Fahimi, Zahra, Larimian, Shabnam, Nili, Hussein, Kim, Hyugin, and Strukov, Dmitri B. "A Strong Physically Unclonable Function With >2⁸⁰ CRPs and <1.4% BER Using Passive ReRAM Technology". IEEE Solid-State Circuits Letters 3 (). Country unknown/Code not available. https://doi.org/10.1109/LSSC.2020.3010255. https://par.nsf.gov/biblio/10311385.

@article{osti_10311385,
place = {Country unknown/Code not available}, title = {A Strong Physically Unclonable Function With >2⁸⁰ CRPs and <1.4% BER Using Passive ReRAM Technology}, url = {https://par.nsf.gov/biblio/10311385}, DOI = {10.1109/LSSC.2020.3010255}, abstractNote = {}, journal = {IEEE Solid-State Circuits Letters}, volume = {3}, author = {Mahmoodi, Mohammad Reza and Fahimi, Zahra and Larimian, Shabnam and Nili, Hussein and Kim, Hyugin and Strukov, Dmitri B.}, }